In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 20, No. 3 ( 2002-05-01), p. 797-801
Abstract:
Electronic transport measurements of Ag/3,4,9,10-perylenetetracarboxylic dianhydride In/Si(001) heterostructures demonstrate that when the structure temperature approaches the In melting point a current-voltage characteristic changes from rectifying to ohmic. The synchrotron radiation photoemission investigation of the 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) layers of the same thickness grown on In in the same temperature range show strong In diffusion throughout the PTCDA layers as thick as 1 μm. The formation of In-related coordination compound appears to be limited to the region near the In/PTCDA interface.
Type of Medium:
Online Resource
ISSN:
0734-2101
,
1520-8559
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2002
detail.hit.zdb_id:
1475424-1
detail.hit.zdb_id:
797704-9
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