In:
Journal of Materials Research, Springer Science and Business Media LLC, Vol. 19, No. 3 ( 2004-03), p. 741-745
Abstract:
Comprehensive results are presented on the influence of interfaces on electronic structure and giant magnetoresistance (GMR). Two structures were calculated for Co 5 /Cu 3 /Co 5 and Co 3 /Cu/Co/Cu 3 /Co/Cu/Co 3 , where numbers stand for monolayer numbers of atoms, by employing the discrete variational method in the framework of the local spin density approximation. It has been found that the electron spin-dependent scattering is very strong at the interfaces compared to the interiors of the ferromagnetic layers, independent of the moment alignment configuration. The calculation results of total energy for various magnetization configuration revealed that antiferromagnetic exchange coupling was present between any of the ferromagnetic layers separated by Cu layers at zero field in the Co 3 /Cu/Co/Cu 3 /Co/Cu/Co 3 . The evaluated GMR ratio for the Co 3 /Cu/Co/Cu 3 /Co/Cu/Co 3 (about 35.1%) was much larger than that of the Co 5 /Cu 3 /Co 5 (about 21.0%), indicating large GMR effect could be expected with more interfaces when the thicknesses were the same. The result also indicated that the negative polarization of 4 s electrons could reduce the GMR effect.
Type of Medium:
Online Resource
ISSN:
0884-2914
,
2044-5326
DOI:
10.1557/jmr.2004.19.3.741
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2004
detail.hit.zdb_id:
54876-5
detail.hit.zdb_id:
2015297-8
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