In:
Journal of Applied Physics, AIP Publishing, Vol. 86, No. 1 ( 1999-07-01), p. 537-542
Abstract:
Strained InGaAsP/InP single quantum wells grown by low pressure metalorganic vapor phase epitaxy are studied by photoluminescence. We demonstrate that the analysis of the Arrhenius plot, specially modified to fit the temperature dependence of the integrated photoluminescence intensity, can be used as a complementary technique in order to identify different optical transitions that take place in more complex photoluminescence spectra.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1999
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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