In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 689 ( 2001)
Abstract:
We report the synthesis of superconducting MgB 2 thin films grown in-situ by molecular beam epitaxy (MBE). Mg-rich fluxes are deposited with B-flux by electron beam evaporation onto c- and r-plane sapphire substrates. Deposition temperature is varied between 260 ∼ 320 °C. Base pressure of the MBE chamber is at low 10 -10 Torr, rising to 10 -8 Torr during deposition due mostly to the presence of hydrogen and nitrogen. Asgrown MgB 2 films show superconducting transition at ∼ 34 K with ΔT c 〈 1 K. The films on c-plane sapphire substrates exhibit c-axis oriented peaks of MgB 2 , and full-width at half maximum of 3 degree in their rocking curves. Azimuthal phi-scan of the MgB 2 (101) peak shows 12-fold symmetric peaks, which is confirmed by selected area diffraction pattern in transmission electron microscopy (TEM). Plan-view TEM shows hexagonal-shaped grain growth with grain size of about 400 Å.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-689-E10.8
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2001
detail.hit.zdb_id:
605289-7
detail.hit.zdb_id:
2451008-7
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