In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 16, No. 5 ( 1998-09-01), p. 2639-2643
Abstract:
The crystalline quality of tensile strained Ga0.25In0.75P layers grown on InP substrates was investigated. The samples were grown by metalorganic molecular beam epitaxy. Little or no relaxation was found in Ga0.25In0.75P layers which were up to 500 Å thick. The relaxation of layers less than 700 Å thick was isotropic, but thicker (bulk-like) layers relaxed anisotropically, with the main relaxation along the [11̄0] direction. Fully strained layers up to a thickness of 650 Å were obtained by employing strain compensation. Heterostructure field effect transistors (HFETs) incorporating a tensile 200 Å thick Ga0.25In0.75P barrier were fabricated. A composite channel of compressive strained Ga0.3In0.7As and lattice matched GaInAs was used to compensate the tensile strained barrier. The HFET channel was partially doped. A peak transconductance of 200 mS/mm was obtained in HFETs having a 1 μm long gate. The drain-source breakdown voltage was 10 V, and gate-drain breakdown voltage was 11 V. The unity current gain frequency, fT, and the maximum frequency of oscillation, fmax, were 23.5 and 50 GHz, respectively. Resonant tunneling diodes with Ga0.25In0.75P barriers and a Ga0.47In0.53As well were demonstrated as well. Peak to valley current ratios of 1.15 and 5 were obtained at room temperature and 77 K, respectively.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1998
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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