In:
International Journal of High Speed Electronics and Systems, World Scientific Pub Co Pte Ltd, Vol. 14, No. 03 ( 2004-09), p. 825-830
Abstract:
AlGaN/GaN HBTs with DC current gains in excess of 10 have been demonstrated; however, Makimoto et al have recently obtained a DC current gain value exceeding 2000 for a GaN/InGaN/GaN triple mesa DHBT. 1,2,3 The experimental demonstration of a GaN -based HBT with such extraordinary DC current gain has motivated the search for new device structures conducive to high DC current gain. Simulations in this work indicate that high DC current gain is difficult to achieve with a uniform, defect-free base layer. We also simulate the electrical characteristics of a new class of DHBT where the base layer is non-uniform. By non-uniformly thinning or perforating the base, the majority of the base would remain thick to minimize the negative impact to base resistance. However, small thinned regions achieve extremely high DC current gain, which can be used to significantly increase the overall DC current gain. This device structure could naturally occur when "V" defects form or Indium is non-uniformly distributed during the base layer growth. The sensitivity of DC current gain to the base thickness range, duty cycle, defect geometry, and defect type is also investigated.
Type of Medium:
Online Resource
ISSN:
0129-1564
,
1793-6438
DOI:
10.1142/S0129156404002909
Language:
English
Publisher:
World Scientific Pub Co Pte Ltd
Publication Date:
2004
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