In:
Applied Physics Letters, AIP Publishing, Vol. 50, No. 8 ( 1987-02-23), p. 448-450
Abstract:
The activation of high dose Mg+ implants (1×1015 cm−2, 100 keV) in GaAs using capless rapid thermal annealing has been improved by the co-implantation of As+. This technique reduces the outdiffusion of the implanted Mg, which can adversely affect the activation of shallow, high dose implants. Compared with an activation of 18% for an implant of Mg+ only, the co-implantation of As+ has increased the activation to as much as 61% with concomitant sheet resistance of 136 Ω/⧠. The placement of the As+ implant with respect to the position of the Mg+ profile has been determined to play a role in the activation efficiency. This technique has been applied to the formation of thick p+ regions with high surface carrier concentrations, which has important applications in device fabrication for reduction of contact resistances.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1987
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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