In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 8R ( 1997-08-01), p. 5044-
Abstract:
Selective growth of ZnSe and ZnS on (001) GaAs substrates partially covered with SiO x was examined by metalorganic molecular-beam epitaxy. The growth temperature was the key factor for the selective growth, and the minimum growth temperature of ZnS to achieve selective growth was 450°C. On the other hand, the minimum growth temperature of ZnSe was 500°C. This difference of temperature for the selective growth made it difficult to grow high-quality ZnSe/ZnS heterostructures. To overcome this problem, we used periodic supply epitaxy to lower the selective growth temperature of ZnSe. Supply interruption after short time supply of ZnSe enhances the desorption of precursors especially on SiO x surfaces and this suppresses the nucleation of ZnSe on SiO x surfaces. The lower VI/II ratio also suppresses nucleation of ZnSe on SiO x . The selective growth of ZnSe was thus achieved at 430°C with a VI/II ratio of 1. The minimum selective growth temperature reported on ZnSe up to now is 600°C, and this work demonstrated the selective growth of ZnSe at a considerably lower temperature. We have prepared a ZnSe/ZnS single quantum well (SQW) at 450°C under the selective growth condition and the bright band edge emission from the ZnSe well was observed by photoluminescence measurement at 13 K.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.5044
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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