In:
Applied Physics Letters, AIP Publishing, Vol. 89, No. 4 ( 2006-07-24)
Abstract:
Incorporation of tritium in hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) at 250°C using tritium (T2) gas at pressures of up to 120atm is reported. The tritium is stored in a surface layer which is approximately 150 and 10nm for a-Si:H and c-Si, respectively. The concentration of tritium occluded in planar and textured c-Si is linearly dependent on the total surface area. The tritium is stable and the dominant tritium evolution occurs at temperatures above 300°C. The concentration of tritium locked in a-Si:H and c-Si was 20 and 4at.%, respectively. Self-catalysis appears to be important in the tritiation process.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2006
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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