In:
ECS Transactions, The Electrochemical Society, Vol. 66, No. 1 ( 2015-04-13), p. 185-190
Abstract:
A novel structure with backside gate was proposed in this study. The effect of backside gate to the device performance including DC performance and breakdown voltage was investigated. When the back-side gate was biased at -25V, the leakage current could be suppressed to one order lower. As a result, the subthreshold swing (SS) could be improved from 240 to 137 mV/dec. Most important of all, the off-state drain breakdown voltage could be increased by 40%. If the back-side gate is connected to the front-side gate, which could be viewed as a back-side gate field plate structure, the off-state drain breakdown voltage could be improved by 7%
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
DOI:
10.1149/06601.0185ecst
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2015
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