In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 4R ( 2010-04-01), p. 041101-
Abstract:
GdVO 4 (GVO) thin films were successfully deposited on n-GaN/Al 2 O 3 substrates used as a bottom electrode at 600 °C by radio frequency magnetron sputtering. The GVO films annealed at temperatures up to 800 °C exhibited epitaxial growth but the films annealed above 900 °C showed polycrystalline properties. In the photoluminescence (PL) spectrum, broadband emission was observed at 450 nm for all the films. The auger electron spectroscopy (AES) line-shape of the annealed films was similar to that of the as-deposited film but the Gd/V and Gd/O ratios increased linearly with increasing annealing temperature. The dielectric constant and dielectric loss of the GdVO 4 films decreased with increasing annealing temperature with values of 12–26 and 0.04–0.05 at 1 MHz, respectively.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.041101
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2010
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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