In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 1A ( 1997-01-01), p. L41-
Abstract:
Monocrystalline Er 3+ -doped LaF 3 layers were heteroepitaxially grown on CaF 2 (111) substrates with an Er 3+ concentration of up to 38.7 mol% by molecular beam epitaxy. The hexagonal crystal structure of LaF 3 was confirmed from the beginning of the layer formation by RHEED patterns. Green light emission at 538 nm was generated by upconversion employing near 800 nm pump wavelengths from a Ti:sapphire laser. The maximum emission intensity of green light was obtained at an Er 3+ concentration of 11 mol%, which was several times higher than that obtained from an Er 3+ -doped CaF 2 film on CaF 2 (111). This is discussed in relation to the effect of the heavy mass of La on the emission mechanism.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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