In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 556-557 ( 2007-9), p. 171-174
Kurzfassung:
3C-SiC/Si heteroepitaxy is hampered by large mismatches in lattice parameters (19.7%)
and thermal expansion coefficient (8%) leading to 3C-SiC films containing high defects density. To reduce the presence of defects, a multi-step growth process in a CVD reactor is used. The aim of the
work is to study the effect of carbonization on differently oriented Si surfaces, experiencing a 200°C-wide temperature range in a CVD reactor, to improve the crystalline quality. TEM analysis
are carried out to evaluate thickness, crystal orientations and defects of carbonized layers with respect to the time-dependence of the process and to the different orientations of the Si substrate. It
will be shown that process-related defects are strictly correlated to the substrate orientation either for size, density, occupied area, shape or thickness. Uniform, flat and crystalline thin SiC films are
obtained with a low defect density.
Materialart:
Online-Ressource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.556-557
DOI:
10.4028/www.scientific.net/MSF.556-557.171
Sprache:
Unbekannt
Verlag:
Trans Tech Publications, Ltd.
Publikationsdatum:
2007
ZDB Id:
2047372-2
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