In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 56, No. 3 ( 2007), p. 1353-
Abstract:
Using high-resistivity (10000—20000 Ω·cm) n-type Si wafers,we have developed φ60 PIN semiconductor detector with depletion thickness ~1000 microns for low-intensity pulsed γ-ray flux measurement.For determination of thickness of the depletion depths, a recoil proton chamber with 20° scattering angle has been constructed.The detector's performance have been measured and analyzed,which indicates that the developed detector satisfactorily meets the expected specifications.Compared with the existing detectors with depletion depths of 200—300 microns,the detector has much greater γ detecting sensitivity and suited for measuring pulsed γ-ray flux in low-intensity mixed γ/n fields.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2007
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