In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 13, No. 2 ( 1995-03-01), p. 706-708
Kurzfassung:
We have grown bulk GaAsSb layers lattice matched to InP by molecular-beam epitaxy. From the studies of scanning electron microscopy, x-ray diffraction, and photoluminescence characterizations, these films exhibit mirror-like surface morphology and good crystallographic quality, and show promising optical characteristic. The 300 K and 77 K photoluminescence spectra showed strong emission intensities. The measured 10 K linewidth was 8.6 meV for films grown at 510 °C with a V/III ratio of 4. The Sb flux is only 3.6% of the As flux, confirming that the Sb incorporation rate limits the alloy composition of this ternary compound. No discrepancy was observed between the photoluminescence peak energies and calculated values, suggesting negligible radiative recombination via deep level traps.
Materialart:
Online-Ressource
ISSN:
1071-1023
,
1520-8567
Sprache:
Englisch
Verlag:
American Vacuum Society
Publikationsdatum:
1995
ZDB Id:
3117331-7
ZDB Id:
3117333-0
ZDB Id:
1475429-0
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