In:
Journal of Materials Chemistry C, Royal Society of Chemistry (RSC), Vol. 10, No. 34 ( 2022), p. 12350-12358
Kurzfassung:
In this study, indium tin oxide (ITO) thin films are prepared by plasma enhanced atomic layer deposition (PEALD) using alternating exposures to cyclopentadienyl indium and oxygen plasma for indium oxide (In 2 O 3 ) and tetrakis (dimethylamido) tin and oxygen plasma for tin oxide (SnO 2 ). The cycle ratio of SnO 2 -to-In 2 O 3 is varied to investigate the effect on the film properties. The ITO films are examined using X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy, Hall-effect probe measurement, and UV-visible transmittance measurement. It is found that the film thickness and Sn content can be well controlled by adjusting the SnO 2 cycle ratio. The lowest resistivity of 2.9 × 10 −4 Ω cm, a high mobility of 52 cm 2 V −1 s −1 and an average optical transmittance of 89% are obtained at the SnO 2 cycle ratio of 5%. A very high doping efficiency of 86% is achieved. Furthermore, a single-crystalline-like structure is obtained, accounting for the high mobility of the films. The PEALD single-crystalline-like ITO films are suitable for electronic device applications requiring complex substrate deposition or sub-nanoscale thickness control.
Materialart:
Online-Ressource
ISSN:
2050-7526
,
2050-7534
Sprache:
Englisch
Verlag:
Royal Society of Chemistry (RSC)
Publikationsdatum:
2022
ZDB Id:
2702245-6
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