In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 23, No. 6 ( 2005-11-01), p. 3116-3119
Kurzfassung:
Energetic neutral beam lithography/epitaxy (ENABLE) was used for etching very high-aspect-ratio nanoscale structures into polymers and for growing templated AlN films at low temperatures. Various methods were used for masking polymeric films for selective etching by energetic oxygen atoms to fabricate sub-100nm structures with aspect ratios exceeding 35:1. ENABLE was also utilized for low-temperature growth of AlN into previously etched polymer templates to directly form AlN wires. By taking advantage of the unique processing capabilities of ENABLE, new opportunities for making delicate nanostructures are made possible.
Materialart:
Online-Ressource
ISSN:
1071-1023
,
1520-8567
Sprache:
Englisch
Verlag:
American Vacuum Society
Publikationsdatum:
2005
ZDB Id:
3117331-7
ZDB Id:
3117333-0
ZDB Id:
1475429-0
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