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  • 1
    Electronic Resource
    Electronic Resource
    Disordering in 69GaAs/71GaAs isotope superlattice structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5206-5212 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped 69GaAs/71GaAs isotope superlattice structures grown by molecular beam epitaxy on n-type GaAs substrates, doped by Si to ∼3×1018 cm−3, have been used to study Ga self-diffusion in GaAs by disordering reactions. In the temperature range of 850–960 °C, the secondary ion mass spectrometry (SIMS) measured Ga self-diffusivity values showed an activation enthalpy of 4 eV, and are larger than previously compiled Ga self-diffusivity and Al-Ga interdiffusivity values obtained under thermal equilibrium and intrinsic conditions, which are characterized by a 6 eV activation enthalpy. Characterizations by SIMS, capacitance-voltage (C-V), and transmission electron microscopy showed that the as-grown superlattice layers were intrinsic which turned into p type with hole concentrations of ∼2×1017 cm−3 after annealing, because the layers contain carbon. Dislocations of a density of ∼106–107 cm−2 were also present. However, the factor responsible for the presently observed larger Ga self-diffusivity values appears to be Si out-diffusion from the substrate, which was determined using C-V measurements. Out-diffusion of Si decreases the electron concentration in the substrate which causes the release of Ga vacancies into the superlattice layers where they become supersaturated. This Ga vacancy supersaturation leads to enhanced Ga self-diffusion in the superlattice layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352002
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of microstructure on the Urbach edge of amorphous SiC:H and amorphous SiGe:H alloys (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1167-1169 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared measurements have been used as a means of quantifying the amount of hydrogenated amorphous silicon and amorphous silicon alloy microstructure. Using a parameter obtained from these infrared measurements, the Urbach edge of amorphous silicon (a-Si:H), amorphous silicon carbon (a-SiC:H), and amorphous silicon germanium (a-SiGe:H) obtained from photothermal deflection spectroscopy measurements fall on the same curve. This suggests that the decreasing steepness of the Urbach edge, observed to occur with increasing alloying, is due primarily to microstructural effects and not to increased structural or compositional disorder. Based upon this correlation, we suggest an explanation for the observed decrease in alloy material photoconductivity with increasing alloy content.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98721
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  • 3
    Electronic Resource
    Electronic Resource
    Equilibrium temperature and related defects in intrinsic glow discharge amorphous silicon (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 412-414 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We find the equilibrium temperature for intrinsic glow discharge amorphous silicon to be 195–200 °C. Defects left behind after fast cooling result in a temperature-dependent dc photoconductivity which shows small differences in the tail state recombination kinetics when compared to defects left behind in the same number after light soaking. Finally anneal kinetics of fast cool defects follow neither singly activated, mono-, nor bimolecular kinetics with a temperature dependence indicating activation energies from 1.0 to 1.4 eV. Unlike the distribution of defects left behind in similar number as a result of light soaking at room temperature, the distribution of defects resulting from fast cooling from higher temperature is shifted to higher energies and requires much longer anneal times.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98406
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  • 4
    Electronic Resource
    Electronic Resource
    Microstructure of visibly luminescent porous silicon (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2800-2802 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of luminescent porous silicon, formed by electrochemical etching of silicon wafers has been characterized by cross-sectional high-resolution transmission electron microscopy. Results of this study reveal the structure to consist of Si crystallites. The crystallites are ∼3.5 nm in size and are randomly distributed throughout the porous Si region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106832
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  • 5
    Electronic Resource
    Electronic Resource
    High pressure optical investigation of porous silicon (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1435-1437 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed the first photoluminescence (PL) measurements under hydrostatic pressure up to 37 kbar at room temperature on several porous silicon (Si) samples fabricated under different etching conditions. A blue shift of the PL peak energy was observed in all samples from 0 to ∼20 kbar. Above ∼20 kbar, the PL peak energy appears to be constant or even to exhibit a small red shift with pressure in some samples. This pressure dependence of the PL peak energy of porous Si is different from the pressure induced red shift in the PL from the indirect band gap of the bulk Si crystal, or the red shift in the PL from amorphous Si. The intensity of the PL peaks showed a decrease with increasing pressure. We have also observed a red shift with time when a blue laser continuously illuminated the sample. These results on the pressure dependence of porous Si provide critical information for modeling and determining the electronic structure of porous silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108466
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  • 6
    Electronic Resource
    Electronic Resource
    Correlation of Raman and photoluminescence spectra of porous silicon (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 112-114 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The discovery of luminescence in electrochemically etched porous silicon is an extremely important scientific breakthrough with enormous technological implications. It opens the door for silicon, the most important microelectronic material, as a possible material for optoelectronics applications. Our result, a correlation of Raman and photoluminescence spectra, shows that the observed luminescence is originated from extremely small microstructures. As the luminescent peak increases in photon energy, the Raman feature shifts to lower energy, remaining sharp, and eventually splits, developing into TO and LO modes. No peak at 480 cm−1 is observed, which indicates no substantial contribution from an amorphous region. These data provide strong evidence of the role of microstructures in porous silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107364
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  • 7
    Electronic Resource
    Electronic Resource
    Direct current conduction properties of sputtered Pt/(Ba0.7Sr0.3)TiO3/Pt thin films capacitors (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2975-2977 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current flow through Pt/(Ba0.7Sr0.3)TiO3/Pt stack consists of both polarization current and electronic leakage current, which were separated by monitoring the discharging current when applied voltage was turned off. Electronic current comes from electrical field enhanced Schottky emission at the electrode–dielectric interface, and dominates the current flow at high electric field. At low electric field, polarization current prevails. The voltage and time dependence of the polarization current can be modeled by a distribution of Debye-type relaxations. The relaxation time and capacitance derived from current–time measurements were applied to simulate the current–voltage behavior, where good fitting to experimental result was obtained. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114248
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  • 8
    Electronic Resource
    Electronic Resource
    Surface segregation and growth-mode transitions during the initial stages of Si growth on Ge(001)2×1 by cyclic gas-source molecular beam epitaxy from Si2H6 (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 240-247 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface morphological and compositional evolution during the initial stages of Si growth on Ge(001)2×1 by cyclic gas-source molecular beam epitaxy from Si2H6 has been investigated using in situ reflection high-energy electron diffraction (RHEED), Auger electron spectroscopy, electron-energy-loss spectroscopy, and scanning tunneling microscopy, combined with post-deposition high-resolution cross-sectional transmission electron microscopy. The layers were deposited using repetitive cycles consisting of saturation Si2H6 dosing at room temperature, followed by annealing for 1 min at 550 °C. Film growth was observed to proceed via a mixed Stranski–Krastanov mode. Single-step-height two-dimensional growth was obtained for nominal Si deposition thicknesses tSi up to (approximately-equal-to)1.5 monolayers (ML). However, the upper layer remained essentially pure Ge which segregated to the surface through site exchange with deposited Si as H was desorbed. At higher tSi, the Ge coverage decreased slowly, the surface roughened, and two-dimensional multilayer island growth was observed for tSi up to (approximately-equal-to)7.5 ML, where bulk reflections in RHEED patterns provided evidence for the evolution of three-dimensional island formula.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355890
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  • 9
    Electronic Resource
    Electronic Resource
    Interaction of optical and acoustic phonons with longitudinal plasma waves
    Amsterdam : Elsevier
    Annals of Physics 32 (1965), S. 100-113 
    Details
    ISSN: 0003-4916
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0003-4916(65)90061-8
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  • 10
    Electronic Resource
    Electronic Resource
    Transport in nanoscale silicon clusters
    Amsterdam : Elsevier
    Physica B: Physics of Condensed Matter 189 (1993), S. 235-240 
    Details
    ISSN: 0921-4526
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0921-4526(93)90165-3
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