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  • 1
    Online Resource
    Online Resource
    Herstellung von funktionalisierten Halbleiternanokristallen und Anwendung in lateral strukturierten Bauelementen : Forschungsbericht/Abschlußbericht (2002)
    München : Ludwig-Maximilians-Univ., Sektion Physik, Lehrstuhl für Photonik und Optoelektronik
    Details Availability
    Keywords: Forschungsbericht
    Type of Medium: Online Resource
    Pages: Online-Ressource (20 p., 178 Kb.) , ill., graphs
    Edition: [Elektronische Ressource]
    URL: https://edocs.tib.eu/files/e01fb02/343981041.pdf
    URL: https://edocs.tib.eu/files/e01fb02/343981041l.pdf
    Language: English
    Note: Contract BMBF 03N8604 9. - Differences between the printed and electronic version of the document are possible. - nIndex p. 18 - 20 , Also available as printed version , Systemvoraussetzungen: Acrobat Reader.
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  • 2
    Electronic Resource
    Electronic Resource
    A novel mutation of the DSRAD gene in a Chinese family with dyschromatosis symmetrica hereditaria (2004)
    Oxford, UK : Blackwell Science Ltd
    Clinical and experimental dermatology 29 (2004), S. 0 
    Details
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Dyschromatosis symmetrica hereditaria (DSH) is a pigmentary genodermatosis of autosomal dominant inheritance characterized by a mixture of hyperpigmented and hypopigmented macules distributed on the dorsal aspects of the hands and feet. It is caused by mutations of the RNA-specific adenosine deaminase gene. We report the identification of a Chinese family with a three-generation pedigree of DSH, in whom a novel tyrosine substitution mutation in DSRAD was demonstrated: a heterozygous nucleotide A→G transition at position 2879 in exon 10 of the DSRAD gene was detected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2230.2004.01548.x
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  • 3
    Electronic Resource
    Electronic Resource
    Marie Unna hereditary hypotrichosis: report of a Chinese family and evidence for genetic heterogeneity (2004)
    Oxford, UK : Blackwell Science Ltd
    Clinical and experimental dermatology 29 (2004), S. 0 
    Details
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Marie Unna hereditary hypotrichosis (MUHH) is a rare autosomal dominant disorder with progressive hair loss starting in early childhood and aggravating at puberty. Several studies have mapped the MUHH gene to chromosome 8p21. Here we report a Chinese MUHH family with variable phenotypes. All affected individuals have anomalies affecting both hair density and hair shafts. Major clinical characteristics, disease history and histological examination support the diagnosis of MUHH, but the features of scarring in this kindred are modest and none of the patients have vertex hair loss, which is in contrast with typical MUHH. We now report genotyping and linkage analysis using 11 polymorphic microsatellite markers spanning the MUHH locus at 8p. Two-point linkage analysis using these markers revealed significant exclusion of this locus (log of the odds scores 〈 − 2) at θ = 0 indicating that there is a range of clinical presentations in MUHH, and that more than one genetic locus is responsible for the disorder.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2230.2004.01570.x
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  • 4
    Electronic Resource
    Electronic Resource
    Haplotype associations of the MHC with psoriasis vulgaris in Chinese Hans (2004)
    Oxford, UK : Blackwell Science Ltd
    Clinical and experimental dermatology 29 (2004), S. 0 
    Details
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Haplotype associations of the major histocompatibility complex (MHC) with psoriasis vulgaris (PV) have been demonstrated in different racial or ethnic populations. The objective of this study was to demonstrate the different haplotype associations of the MHC in Chinese patients with psoriasis according to the type of onset and their sex. One hundred and thirty-eight patients with PV and 149 normal control subjects without psoriasis were typed for HLA-A, -B, -C, -DQA1, -DQB1 and -DRB1 by using the PCR with sequence-specific primers. The results showed: (i) HLA-A*26 (26.1% vs. 12.1%, Pc 〈 1 × 10−5), -B*27 (17.03% vs. 1.01%, Pc 〈 1 × 10−7), -Cw*0602 (15.58% vs. 5.03%, Pc 〈 1 × 10−2), -DQA1*0104 (19.93% vs. 9.40%, Pc 〈 1 × 10−3), -DQA1*0201 (22.40% vs. 10.74%, Pc 〈 1 × 10−3), -DQB1*0303 (18.12% vs. 9.73%, Pc 〈 1 × 10−7), and -DRB1*0701/02 (26.09% vs. 9.73%, Pc 〈 1 × 10−7) were significantly increased in PV patients, while HLA-B*57, -DQB1*0201 were slightly increased in PV patients. HLA-Cw*0304 (5.07% vs. 14.43%, Pc 〈 1 × 10−3), -DQA1*0501 (5.79% vs. 14.09%, Pc 〈 0.05) were found to be negatively associated with PV, but HLA-A*2 (2.54% vs. 6.38%, Pc 〈 0.5) was decreased in PV patients without statistical significance. (ii) HLA-A*26-B*27 [P 〈 0.0001, odds ratio (OR) = 48.38], -A*26-Cw*0602 (P 〈 0.0001, OR = 11.84), -B*27-Cw*0602 (P 〈 0.0001, OR = undefined), -DRB1*0701/02-B*27 (P 〈 0.0001, OR = 22.62), -DRB1*0701/02-DQA1*0104 (P 〈 0.0002, OR = 3.59), -DRB1*0701/02-DQB1*0303 (P 〈 0.0001, OR = 5.63), -DQA1*0201-DQB1*0303 (P 〈 0.0002, OR = 7.77), -A*26-B*27-Cw*0602 (P 〈 0.0004, OR = undefined), -A*26-DRB1*0701/02-DQA1*0201-DQB1*0303 (P 〈 0.01, OR = undefined) were identified as risk haplotypes for patients with PV in China. (iii) HLA-A*26 -B*27 (P 〈 0.0001, OR = 58.47), -DQA1*0201-DQB1*0303 (P 〈 0.0001, OR = 8.62), -DRB1*0701/02 -DQA1*0104 (P 〈 0.0002, OR = 4.13), -DRB1*0701/02-DQB1*0303 (P 〈 0.0001, OR = 6.68) and -A*26-DRB1*0701-DQA1*0201 -DQB1*0303 (P 〈 0.006, OR = undefined) were only significantly associated with type I psoriasis compared with controls, while others showed no differences in either type I or type II psoriasis. (iv) These associated haplotypes with PV were not different by sex, except that the frequency of DRB1*0701/02-DQB1*0303 (P 〈 0.0001, OR = 10.14) was higher in male patients with psoriasis. To summarize, this study demonstrated a differential association of HLA and identified some special risk haplotypes in Chinese patients with PV compared with other ethnic or racial populations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2230.2004.01528.x
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  • 5
    Electronic Resource
    Electronic Resource
    Void-like defects in annealed Czochralski silicon (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2311-2312 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Void-like defects of octahedron structure having {111} facets were observed in annealed Czochralski silicon. The amorphous coverage of SiOx and SiCx on the inner surface of the defects was identified using transmission electron microscopy and electron energy-loss spectroscopy. It is suggested that these defects are a kind of amorphous precipitate origin. A mechanism for the generation of these defects and the previously reported solid amorphous precipitates is proposed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121807
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  • 6
    Electronic Resource
    Electronic Resource
    Accurate measurement of phase shift in electron holography (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 771-773 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method is proposed for the accurate measurement of phase shift in electron holography. The method is based on the use of moiré fringes resulting from the subtraction of a null electron hologram by a real object hologram recorded under slightly different experimental conditions. This method does not require any optical or digital reconstruction of the electron hologram, and is shown to be highly sensitive to the phase shift of the electron wave passing through an object. Using experimental results obtained from a single particle of silicon, we demonstrate that the sensitivity of this method to phase shift may easily be amplified by more than 11 times compared with the conventional method using an ordinary electron hologram. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120888
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  • 7
    Electronic Resource
    Electronic Resource
    Integration of n-type and p-type quantum-well infrared photodetectors for sequential multicolor operation (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2067-2069 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A multicolor infrared photodetector based on the epitaxial integration of an n-type with a p-type GaAs/AlGaAs quantum-well stack is experimentally demonstrated. Additionally, a quantum-well GaAs light-emitting diode is inserted between the stacks to achieve up-conversion of mid-infrared radiation to near-infrared signal. This device shows a remarkable selectivity on wavelength: depending on the bias voltage the peak wavelength detection can be switched on and off between 9.1 and 4.85 μm. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359482
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  • 8
    Electronic Resource
    Electronic Resource
    Quantum dot infrared photodetectors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 79-81 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled strained semiconductor nanostructures have been grown on GaAs substrates to fabricate quantum dot infrared photodetectors. State-filling photoluminescence experiments have been used to probe the zero-dimensional states and revealed four atomic-like shells (s,p,d,f) with an excitonic intersublevel energy spacing which was adjusted to ∼60 meV. The lower electronic shells were populated with carriers by n doping the heterostructure, and transitions from the occupied quantum dot states to the wetting layer or to the continuum states resulted in infrared photodetection. We demonstrate broadband normal-incidence detection with a responsivity of a few hundred mA/W at a detection wavelength of ∼5 μm. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337649
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  • 9
    Electronic Resource
    Electronic Resource
    Resonant-cavity-enhanced p-type GaAs/AlGaAs quantum-well infrared photodetectors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2400-2402 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant cavities are used to enhance the absorption efficiency in p-type GaAs/AlGaAs quantum-well infrared photodetectors. The cavities are fabricated by applying thick gold films on the detector bottom sides after substrate removal via selective wet etching. The observed peak enhancement and spectral shape are in good agreement with model predictions. Peak absorption of about 25% is obtained for the device studied. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1317548
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  • 10
    Electronic Resource
    Electronic Resource
    GaAs/AlGaAs quantum-well photodetector for visible and middle infrared dual-band detection (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2437-2439 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present experimental results on quantum-well photodetectors for visible and infrared dual-band detection. Large band gap top contacts were used on a standard GaAs/AlGaAs quantum-well infrared photodetector so that visible light could reach the quantum-well region and be absorbed via interband transitions. Two designs were investigated, using a high Al fraction AlGaAs and a short period GaAs/AlAs superlattice contact layer. The dual-band response spectral regions are 0.55–0.7 and 7–10 μm. Measured responsivities are about 0.7 A/W at 8.3 μm and 0.1 A/W at 0.63 μm under −6 V bias voltage. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318232
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