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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 4278-4280 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Local eigenmodes of field-reversed configurations (FRCs) were previously computed using ideal magnetohydrodynamics, including compressibility and double adiabaticity. Here the eigenmodes are compared with earlier analytic models. In equilibria, as initially generated in θ pinches, the rigid displacements of the analytic models are similar to actual eigenmodes in structure and growth rate; moreover, the growth rates are similar to those of global modes. In equilibria that naturally arise later in the quiescent FRC, the analytic models fail to predict features of the eigenmode behavior: ballooning-like structure, and much faster growth rate than global modes. This suggests explanations for the difficulty of forming large FRCs in θ pinches, and for the appearance of characteristic profiles in quiescent FRCs. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 1 (1994), S. 4022-4031 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The local stability of field-reversed configurations (FRC) is analyzed using hydrodynamic stability theory. The equation of state includes both compressibility and double-adiabatic effects. For the first time, eigenmodes of the linearized equations of motion have been computed. The most unstable modes have fast growth rates, comparable to the Alfvén transit time across the FRC radius; i.e., somewhat faster than the frequency (or growth rate) of global modes. In realistic equilibria, the most unstable local modes concentrate, ballooning-mode style, in the high curvature region of magnetic flux lines. The familiar interchange stability criterion is irrelevant for FRCs, since the actual eigenmodes differ markedly from interchange, both in structure and stability. The appearance of fast local modes raises the possibility that they may regulate FRC equilibria. However, surprisingly, equilibria with realistic internal structure (i.e. resembling experiments) are more unstable to ideal local modes than less realistic equilibria, as have often been studied theoretically. Thus, a nonideal theory will be needed to explain the equilibria observed in experiments. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2894-2896 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electro-optic and electroabsorptive modulations have been demonstrated in Schottky barriers in epitaxial ZnSe waveguides with cladding layers of ZnSeS grown single crystal on GaAs substrates. Using an argon laser we demonstrate guided-wave electro-optic modulation with voltages which are predicted by bulk ZnSe electro-optic coefficients. With a 3 mm sample, half-wave modulation was observed at 4 V per micron electrode separation. Electroabsorption with 9.2 dB modulation in a 0.6-mm-long sample was observed at 488 nm. With surface electrodes, rectification within the Schottky barrier made possible a unique rectified optical modulation.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2592-2594 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si quantum wires (QWRs) suspended in SiO2 are successfully created on a V-groove patterned Si(001) substrate by using low-energy oxygen ion implantation. A single Si QWR aligned to [110] is formed near the bottom center of the V groove, which has a hexagonal cross section with {111} and {001} lateral facets. The development of Si QWRs was found to be controlled by the oxygen ion dose and the formation mechanism is attributed to an oxygen ion enrichment near the V-groove corner which arises from lateral ion straggling. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3537-3539 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured the Schottky barrier heights and specific contact resistivities of four different metals on p-type GaN. The Schottky barrier heights of Pt, Ni, Au, and Ti were obtained from the current-voltage characteristics to be 0.50, 0.50, 0.57, and 0.65 eV, respectively. The specific contact resistivities were 0.013, 0.015, 0.026, and 0.035 Ω⋅cm2, respectively. Our experimental results proved that the Schottky barrier heights and specific contact resistivities decrease with increase in metal work function as expected theoretically. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 475-477 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical nonlinear switching and bistability due to increasing absorption have been observed in single-crystal ZnSe waveguides with contrast ratios of 16/1 and switching times of 10 μs at 15 mW of argon laser light. Switching energy is improved over the bulk by a factor of 200.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1112-1113 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-type conduction in InN-containing nitrides doped with Mg has been achieved by metalorganic vapor-phase epitaxy. The hole concentration at room temperature is as high as 7×1017 cm−3. The activation energy of a Mg acceptor is estimated to be 204 meV. D–A pair emission with peak wavelength of about 405 nm is enhanced by thermal annealing. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2249-2251 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel technique is developed for fabricating highly oriented Si nanoparticles (SNP) embedded in SiO2 using multiple low energy oxygen ion implantation during Si molecular beam epitaxy. The SNPs are of nearly isotropic but faceted morphologies with almost perfect crystallinity as revealed by transmission electron microscopy. The preferred axis of SNP cores is found to be aligned to [100] due to epitaxy on a Si(100) substrate, reflecting the highly oriented character of SNPs. Visible luminescence from SNPs with dimensions approaching the quantum confinement regime is observed at room temperature. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3881-3883 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Si substrate purposely grown for Si-based optoelectronic applications is described in this letter. The structure contains a built-in Si/SiO2 Bragg reflector which is prepared by multiple separation-by-implanted-oxygen technique, where in situ low energy oxygen ion implantation is performed on molecular beam deposited Si to create alternating Si/SiO2 epitaxial bilayers. The quality of the top Si layer was confirmed to be epitaxy-ready after cross-sectional transmission electron microscopy. Maximum reflectance at near normal incidence was over 90% for bilayer periods of 4 to 5. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 983-985 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-energy oxygen ion (25 keV O+) implantation was performed on a pseudomorphic Si1−xGex/Si(001) of uniform composition in an attempt to create a SiGe-on-insulator (SiGe-OI) substrate using the separation-by-implanted-oxygen technique. Choosing a small Ge composition (〈0.3) was found to be essential to achieving a SiGe-OI geometry of structural integrity. © 1999 American Institute of Physics.
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