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  • 1
    Electronic Resource
    Electronic Resource
    Plastic flow of borosilicate glass under bombardment with heavy ions (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 97-99 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Irradiation of borosilicate glass at temperatures between 80 and 150 K with a beam of 129Xe ions of 360 MeV produces macroscopically visible plastic flow without any cracks. With respect to this effect the brittle borosilicate glass behaves in the same way as ductile metallic glasses. Even the quantitative details are surprisingly comparable. It is suggested that ion-beam-induced plastic flow will occur virtually in every amorphous material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98608
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of thermal relaxation and low-temperature irradiation on the chemical short-range order of amorphous Zr-Fe alloys (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4141-4149 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous Zr100-xFex ribbons have been produced by melt spinning in the composition range 20≤x≤43. The superconducting transition temperature Tc is used as a probe for studying structural changes in the zirconium-rich alloys. Modifications of the short-range order are controlled by sample composition, by annealing at temperatures below the crystallization temperature (relaxation), and by low-temperature irradiation with heavy ions. In contrast to amorphous Zr-(Cu, Ni, Co) alloys, the critical temperature Tc in the Zr-Fe system increases with increasing annealing temperature. Low-temperature irradiations, on the other hand, lead to a decrease in Tc, which levels off at a value identical for as-quenched and relaxed samples. The results are discussed on the basis of an association model. In the amorphous state, the iron-poor alloy decomposes into iron-rich associates (possibly with Zr2Fe stoichiometry) embedded in a superconducting matrix, slightly improverished in iron, which is described as a regular solution of the components. The composition dependence of the electrical resistivity and the Vickers hardness, as well as previous Mössbauer experiments, indicate the existence of two different associates for x〉30, with concentrations of approximately 33 and 50 at. % Fe, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337496
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  • 3
    Electronic Resource
    Electronic Resource
    Linear energy transfer effects in the radiolysis of polymers. 1. Main-chain degradation of poly(methyl methacrylate) (1984)
    s.l. : American Chemical Society
    Macromolecules 17 (1984), S. 2108-2111 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00140a040
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  • 4
    Electronic Resource
    Electronic Resource
    Small-angle scattering from porous amorphous substances (1991)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 24 (1991), S. 588-592 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Recently, a modulated void structure, i.e. a short-range order in the local arrangement of voids, has been found by small-angle X-ray scattering (SAXS) in heavy-ion-irradiated amorphous silicon a-Si:H. The SAXS intensity S(k) was observed to develop a maximum which increases with irradiation fluence and shifts towards smaller k similar to the case of phase separation. Here, the SAXS spectra from irradiated a-Si:H are compared with S(k) from commercial porous vycor glass – a structure produced by a decomposition process. Furthermore, results are presented of the investigation of the porous structure of glassy carbon as well as the effect of heavy-ion irradiation on this structure. Glassy carbon appears to have number and size of pores comparable to irradiated a-Si:H; the structure function S(k) is, however, quite different and does not exhibit any maximum. Moreover, irradiation with 360 MeV xenon ions leaves the structure function S(k) from porous glassy carbon almost unchanged. The possible origin of these apparently very different small-angle-scattering curves S(k) in amorphous materials with comparable amount of pore volume is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889890012225
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of low temperature irradiation with heavy ions on superconductor niobium (1974)
    Springer
    The European physical journal 268 (1974), S. 189-196 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract To study the effects of heavy ion irradiation at low temperature on type II superconductor Nb, the transition temperatureT c , the normal state residual resistivityρ B , the transition widthΔT ph using oxygen ions of 25 MeV and subsequent thermal annealing were measured. The samples were held at temperatures 〈20 K during irradiation in a cryostat for in situ measurements. The maximum oxygen fluence was about 2·1015 cm−2 corresponding a relatively high defect concentration. The heavy ion irradiation experiments are described. The critical temperatureT c decreases with increasing residual resistivityρ B . In agreement with the theory and experiments, the gap anisotropy parameter is 〈a 2〉=0.008, subsequent annealing shows a hysteresis ofT c versusρ B . The resistivity saturation value ΔρBS = 2.55 μΩ cm was obtained and different recovery stages were found. Significant broadening of transition width during irradiation was observed.T c andΔT ph anneal to 60% in the temperature interval of (60–90) K. Oxygen induced effects as a simulation method of high neutron damage are compared with irradiation measurements using neutrons and deuterons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01669879
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetic moments of isomeric states in146Gd (1979)
    Springer
    The European physical journal 290 (1979), S. 229-230 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01408119
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  • 7
    Electronic Resource
    Electronic Resource
    Electrically conducting ion tracks in diamond-like carbon films for field emission (1999)
    Springer
    Applied physics 69 (1999), S. 239-240 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.80.Jh; 73.61.Cw; 79.70.+q
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Electrically conducting channels in an insulating carbon matrix were produced by 140-MeV Xe ion irradiation. The high local energy deposition of the individual ions along their pathes causes a rearrangement of the carbon atoms and leads to a transformation of the insulating, diamond-like (sp3-bonding) form of carbon into the conducting, graphitic (sp2-bonding) configuration. The conducting ion tracks are clearly seen in the current mapping performed with an atomic force microscope (AFM). These conducting tracks are of possible use in field emission applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050996
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  • 8
    Electronic Resource
    Electronic Resource
    Vertical Nanowire Field Effect Transistor in the Flexible Polymer Foils Based on Ion Tracks (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 121-123 (Mar. 2007), p. 507-512 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: Fabrication of flexible device structures and nanoscale size definition are presently among the mostimportant and ambitious development goals in the IT field. We have recently prepared the verticalnanowire field effect transistor in the flexible polymer foils based on ion tracks. The high-energetic fastheavy ions were used to irradiate the 8μm PET foils and then the chemical etching method wereemployed to prepare cylindrical channels in these PET foils. These channels were subsequently filledwith insulator material and semiconductor, and then provided with suitable metallic contacts, to obtaina vertical field-effect transistor device. Preparation and first electronic results on this new device arereported. Typically over 107 transistors per cm2 with the devices’ diameter of ~100 nm can be obtainedin this technique. The fabrication does not require lithography on the scale of a single transistor, and issuitable for large-area and flexible applications
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.121-123.507.pdf
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  • 9
    Electronic Resource
    Electronic Resource
    Superconducting critical temperature in disordered tin and lead (1979)
    Springer
    Journal of low temperature physics 36 (1979), S. 89-107 
    Details
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Three-micrometer-thick tin and lead films were irradiated at temperatures below 7.2K with 25-MeV oxygen ions. The radiation-induced residual resistivity δ ϱB , superconducting critical temperature T c , and transition width T φ were measured as a function of dose and subsequent thermal annealing. For tin it is found that T c is mainly a function of δ ϱB with the detailed nature of the defects being of minor importance. Quantitative agreement with theory is obtained considering two effects: an enhancement of the isotropic part of the electron-phonon interaction and a smearing out of its anisotropic part with decreasing mean free path of the electrons. For lead the change of T c depends on the defect configuration and it is shown that dislocation loops produce a significant T c increase. A possible phonon contribution to T c due to different vibrational modes of the radiation-induced defects and the host is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00174914
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  • 10
    Electronic Resource
    Electronic Resource
    Radiation-induced defects in amorphous Pd80Si20 (1980)
    Springer
    The European physical journal 40 (1980), S. 19-21 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Irradiation of the metallic glass Pd80Si20 with high energy Ar-ions at low temperatures resulted in electrical resistance increases of about 5% at a measuring temperature of 10 K after fluences of 3·1015 Ar/cm2 indicating that defects were created by radiation damage. Annealing experiments were performed up to 150°C showing a smooth recovery throughout the whole temperature range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01295065
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