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  • 11
    Electronic Resource
    Electronic Resource
    Mechanisms of Inhibition of Calmodulin-Stimulated Cyclic Nucleotide Phosphodiesterase by Dihydropyridine Calcium Antagonists (1997)
    Oxford, UK : Blackwell Science Ltd
    Journal of neurochemistry 69 (1997), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: Calmodulin-dependent cyclic nucleotide phosphodiesterase (CaMPDE) is one of the key enzymes involved in the complex interaction between the cyclic nucleotide and Ca2+ second-messenger systems. CaMPDE exists as tissue-specific isozymes, and initially these isozymes were designated according to their respective subunit molecular mass. A variety of pharmacological agents have been used to inhibit CaMPDE, and this inhibition occurs mostly via Ca2+-dependent association with the proteins. We have examined the effect of dihydropyridine Ca2+-channel blockers felodipine and nicardipine on CaMPDE. The results suggest that the 63-kDa (PDE 1B1) and 60-kDa (PDE 1A2) CaMPDE isozymes are inhibited by felodipine and nicardipine by partial competitive inhibition and that these two Ca2+ antagonists appear to counteract each other. This study further demonstrates the existence of a specific site, distinct from the active site on CaMPDE, that exhibits high-affinity binding of these drugs. Felodipine and nicardipine have similar affinities for 60-kDa CaMPDE isozymes but bring about different levels of enzyme inhibition, suggesting the possibility of designing specific drugs that can protect the enzyme from inhibition by dihydropyridine Ca2+-channel blockers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1471-4159.1997.69020845.x
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  • 12
    Electronic Resource
    Electronic Resource
    Surface roughness effect on surface impedance of superconductors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3669-3672 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The measured values of microwave surface resistance and reactance of a superconductor have generally three contributions from (1) the intrinsic properties, (2) the internal defects, and (3) the external surface roughness. In this paper, we formulate the increased factor of surface resistance and reactance of superconductors using Morgan's square-grooves model and with the consideration that the current flows along the irregular surface. Numerical results obtained using a finite difference method are presented together with fitted closed-form formulas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357430
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  • 13
    Electronic Resource
    Electronic Resource
    Effect of high hydrostatic pressure on phase composition and microstructure in Au-28 at. % Ge alloy/GaAs contacts (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7231-7238 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of external hydrostatic pressure up to 7 kbar on the Au-Ge binary phase diagram and on the arsenic sublimation are evaluated by thermodynamic calculations. Experimental observations in the eutectic Au-28 at. % Ge/GaAs contacts which were annealed at vacuum and in a 7 kbar argon gas, respectively, are taken as illustrative examples for the comparison with the calculated results. It is concluded that pressures up to 7 kbar shift only slightly the phase boundaries in the Au-Ge phase diagram that were obtained in standard conditions (1 atm) and a pure argon gas with a pressure of 7 kbar acts as a good capsulation to prevent species As from sublimation. The measurements indicate that the film/GaAs interface and the film surface in the contacts annealed at 7 kbar are rich in Ge and are morphologically smooth. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358004
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  • 14
    Electronic Resource
    Electronic Resource
    Reactions in Pd/GaAs(001) contacts at 7×108 Pa pressure (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 349-351 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we present the transmission electron microscopy and x-ray diffraction studies of Pd/GaAs (001) contacts that were annealed in an argon ambient with a pressure of 7×108 Pa. Our observations show that this ambient inhibits not only the decomposition of As-rich phases but the reactions accompanying the As sublimation for the Pd/GaAs (001) contacts and that the reactions are described as 4Pd+GaAs→Pd4GaAs (between 25 and 200 °C) and 3Pd+2GaAs→2PdGa+PdAs2 (between 350 and 800 °C).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104630
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  • 15
    Electronic Resource
    Electronic Resource
    Lead zirconate titanate films by rapid thermal processing (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1161-1163 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lead zirconate titanate films have been fabricated by a dc sputtering technique with a post deposition rapid thermal annealing treatment at 650 °C for 10 s. The films exhibited good structural, dielectric, and ferroelectric properties compared to conventional furnace-annealed films. The measured dielectric constant and loss tangent at 1 kHz were 900 and 0.04 and the remanent polarization and coercive field values were 10 μC/cm2 and 23 kV/cm, respectively. No significant fatigue in polarization was observed in the films up to 1010 cycles of bipolar stress. The films were optically transparent and showed a linear electro-optic (EO) effect after poling with an EO coefficient of 1.5×10 −11 m/V.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104351
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  • 16
    Electronic Resource
    Electronic Resource
    Metallizations of AuGeNi/GaAs(001) and Au/GaAs(001) contacts at 4×10−3 Pa and 7×108 Pa pressure (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2913-2915 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The metallizations of AuGeNi/GaAs(001) and Au/GaAs(001) contacts at 4×10−3 Pa and 7×108 Pa pressure have been analyzed by using x-ray diffraction, transmission electron microscopy, and scanning electron microscopy. Our observations show that the high-pressure ambient inhibits the As sublimation loss and that only interdiffusion takes place without any formation of compounds in those contacts annealed in argon at 7×108 Pa. The experimental results are also discussed on the basis of phase diagrams.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104720
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  • 17
    Electronic Resource
    Electronic Resource
    InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 μm grown by metal-organic chemical vapor deposition (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3438-3440 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report high power mid-infrared electrical injection operation of laser diodes based on InAsSb/InAsP strained-layer superlattices grown on InAs substrate by metal-organic chemical vapor deposition. The broad-area laser diodes with 100 μm aperture and 1800 μm cavity length demonstrate peak output powers of 546 and 94 mW in pulsed and cw operation respectively at 100 K with a threshold current density as low as 100 A/cm2. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124120
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  • 18
    Electronic Resource
    Electronic Resource
    Sb mediated C60 thin film growth on mica (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1367-1369 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the growth of C60 thin films on a layer of surfactant Sb which was predeposited on mica substrates with vacuum vapor deposition method. It was found that the growth behaviors of C60 films are significantly affected by the surfactant Sb and the substrate temperature. (112)- and (111)-oriented C60 single-crystal films with large C60 single crystals were obtained when the substrate temperatures were 200 and 215 °C, respectively. The growth mechanisms of the Sb mediated C60 films were attributed to the reduced surface diffusion rate of adsorbed C60 molecules and the lowered boundary potential energy of C60 islands by surfactant Sb. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122163
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  • 19
    Electronic Resource
    Electronic Resource
    Grey scale memory in an optically addressed spatial light modulator with a Lu(Pc)2 doped layer (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 765-767 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An optically addressed spatial light modulator with electrolyte bisphtalocyanine of lutetium incorporated in the alignment layer is shown to be capable of memorizing a grey scale image. The relationship between the memorized grey scale and the illumination is shown. The temperature, the concentration of Lu(Pc)2 and the spontaneous polarization of liquid crystals are found to have the effect on the memorization rate. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120887
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  • 20
    Electronic Resource
    Electronic Resource
    Fine structure of DX(Sn) centers in AlxGa1−xAs (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2497-2500 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High resolution Laplace defect spectroscopy was used to study the fine structure of the electron emission process of DX(Sn) centers in AlxGa1−xAs (x=0.26,0.53). Two groups of peaks in the spectra of electron emission rates were found to correspond to two DX-like centers observed by deep level transient spectroscopy. The line splitting in both groups derives from the alloy disorder effect attributed to the different local configurations of Al and Ga atoms around two DX-like centers. Experimental evidence for the microscopic nature of two DX-like centers in Sn-doped AlGaAs is provided. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368614
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