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  • 11
    Electronic Resource
    Electronic Resource
    In situ ellipsometry growth characterization of dual ion beam deposited boron nitride thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2593-2599 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pure hexagonal h, as well as mixed-phase cubic/hexagonal c/h boron nitride (BN) thin films were deposited onto [001] silicon substrates using the dual ion beam deposition technique. The BN thin films were grown under UHV conditions at different substrate temperatures and ion beam bombarding parameters. Thin-film growth was monitored using in situ spectroscopic ellipsometry at 44 wavelengths between 420 and 761 nm. The in situ ellipsometric Ψ and Δ data were compared with two-layer growth model calculations for the mixed-phase c/h BN, and with one-layer growth model calculations for pure h-BN growth. In situ data provide information on the optical properties of deposited h-BN and c/h-BN material, film thickness, and BN growth rates. A virtual interface approach is employed for the optical properties of the silicon substrate. The growth and nucleation of c-BN observed here confirms the cylindrical thermal spike model. The results for composition and thickness of the BN films were compared to those obtained from ex situ infrared transmission measurements and high-resolution transmission electron microscopy investigations. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372224
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  • 12
    Electronic Resource
    Electronic Resource
    Thermal and structural stability of cosputtered amorphous TaxCu1−x alloy thin films on GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4281-4286 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal and chemical stabilities of amorphous-metal diffusion barrier films are of importance in high-temperature semiconductor device applications. The reaction characteristics of the barrier constituents with the surrounding elements as well as the crystallization temperature determine the thermal stability of an amorphous-alloy diffusion barrier. We report that suitable thin films of Ta-Cu have been prepared over a wide range of compositions, by cosputter deposition onto GaAs and fused-quartz substrates. The amorphous nature and crystallization behavior of the films have been monitored by x-ray diffraction and van der Pauw resistivity measurements. Films were found to be amorphous over the range of 55–95 at. % Ta. In addition, Auger electron spectroscopy surveys and depth profiles were used to investigate the various interdiffusion reactions between the amorphous diffusion barrier, polycrystalline Au overlayers, and GaAs substrates. Barriers of Ta93Cu7 are remarkably effective in preventing Au in-diffusion, a 3000-A(ring) layer remaining unpenetrated after an annealing at 700 °C for 20 min. Diffusion of Ga and/or As into amorphous 93 at. % Ta is more rapid than that of Au. Interfacial reactions formed Ta3Au, CuAu, TaAs2, Ga3Cu7, Cu3As, and other unidentified compounds formed above 700 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337470
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  • 13
    Electronic Resource
    Electronic Resource
    Giant photoresistivity and optically controlled switching in self-assembled nanowires (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4423-4425 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of giant photoresistivity in electrochemically self-assembled CdS and ZnSe nanowires electrodeposited in a porous alumina film. The resistance of these nanowires increases by one to two orders of magnitude when exposed to infrared radiation, possibly because of real-space transfer of electrons from the nanowires into the surrounding alumina by photon absorption. This phenomenon has potential applications in "normally on" infrared photodetectors and optically controlled switches. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1427156
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  • 14
    Electronic Resource
    Electronic Resource
    Infrared response of multiple-component free-carrier plasma in heavily doped p-type GaAs (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 937-939 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic ellipsometry is used to measure the dielectric function of heavily doped p-type GaAs for wave numbers from 100 to 2000 cm−1. Due to partial filling of the heavy- and light-hole valence bands, heavy holes as well as light holes form a multiple-component plasma coupled with longitudinal optical phonons. Line-shape analysis of the infrared response allows differentiating between light- and heavy-hole contributions to the carrier plasma, and the results observed suggest nonparabolicity effects of the heavy- and light-hole valence bands in GaAs. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343490
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  • 15
    Electronic Resource
    Electronic Resource
    Magneto-optical and structural properties of BiAlDyIG/Fe multilayers : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6670-6672 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi- and Al-doped DyIG(y A(ring))/Fe(x A(ring)) (y=50 to 130 A(ring) and x=5 to 15 A(ring)) multilayer thin films were made by magnetron sputtering onto Si(111) substrates. Rapid thermal annealing was used to crystallize these garnet multilayers. The crystallized multilayer samples possess well-defined interfaces. Atomic force microscopy showed that the annealed samples had smooth surfaces, with small grain sizes (∼30 to 80 nm). All of the samples had perpendicular magnetic anisotropy with very square hysteresis loops. The coercivity was found to vary from 600 Oe to 2 kOe, depending on Fe thickness and annealing conditions. The measured figure of merit (square root of)R(θ2K+ε2K) at 420 nm was bigger than 0.4, suggesting that Bi- and Al-doped DyIG/Fe multilayers are promising candidates for blue light magneto-optical recording applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356890
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