GLORIA

GEOMAR Library Ocean Research Information Access

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
Document type
Publisher
Years
  • 11
    Electronic Resource
    Electronic Resource
    Growth of epitaxial GaN films by pulsed laser deposition (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 102-104 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High crystalline quality epitaxial GaN films with thicknesses 0.5–1.5 μm have been successfully grown directly on Al2O3(0001) substrate by pulsed laser deposition (PLD). For films grown at 950 °C, we obtained an x-ray diffraction rocking curve linewidth of 7 arc min. The ion channeling minimum yield in the near-surface region (∼2000 Å) for a 0.5 μm thick film was ∼3%–4% indicating a high degree of crystallinity. The optical absorption edge measured by UV-visible spectroscopy was sharp, and the band gap was found to be 3.4 eV. The crystalline properties of these PLD GaN films are comparable to those grown by metalorganic chemical vapor deposition and molecular beam epitaxy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119441
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 12
    Electronic Resource
    Electronic Resource
    Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3947-3949 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Influence of oxygen pressure on the epitaxy, surface morphology, and optoelectronic properties has been studied in the case of ZnO thin films grown on sapphire (0001) by pulsed-laser deposition. Results of Rutherford backscattering and ion channeling in conjunction with atomic force microscopy clearly indicate that the growth mode, degree of epitaxy, and the defect density strongly depend on the oxygen background pressure during growth. It is also found that the growth mode and the defects strongly influence the electron mobility, free-electron concentration, and the luminescence properties of the ZnO films. By tuning the oxygen pressure during the initial and the final growth stages, smooth and epitaxial ZnO films with high optical quality, high electron mobility, and low background carrier concentration have been obtained. The implication of these results towards the fabrication of superlattices and controlled n- and p-type doping is discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125503
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 13
    Electronic Resource
    Electronic Resource
    Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1−xO alloy films (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1529-1531 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the realization of wide band gap (5–6 eV), single-phase, metastable, and epitaxial MgxZn1−xO thin-film alloys grown on sapphire by pulsed laser deposition. We found that the composition, structure, and band gaps of the MgxZn1−xO thin-film alloys depend critically on the growth temperature. The structural transition from hexagonal to cubic phase has been observed for (Mg content greater than 50 at. %) (1≥x≥0.5) which can be achieved by growing the film alloys in the temperature range of 750 °C to room temperature. Interestingly, the increase of Mg content in the film has been found to be beneficial for the epitaxial growth at relatively low growth temperature in spite of a large lattice mismatch between sapphire and cubic MgZnO alloys. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1456266
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 14
    Electronic Resource
    Electronic Resource
    Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2787-2789 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of visible blind ultraviolet photodetectors based on MgxZn1−xO. Using pulsed laser deposition technique, Mg0.34Zn0.66O thin films with a bandgap of 4.05 eV were epitaxially grown on c-plane sapphire substrates. The structural, electrical, and optical properties of epilayers were characterized using various techniques. Based on the Mg0.34Zn0.66O films, planar geometry photconductive type metal–semiconductor–metal photodetectors were fabricated. At a 5 V bias, a high responsivity of 1200 A/W was achieved at 308 nm, and the visible rejection (R308 nm/R400 nm) was more than four orders of magnitude. The 10%–90% rise and fall time were 8 ns and 1.4 μs, respectively. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368378
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...