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  • 11
    Electronic Resource
    Electronic Resource
    Scanning x-ray microscopy using a laser-plasma source (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 1478-1482 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Previously high-resolution soft x-ray microscopy has only been possible with synchrotron sources. Here, the first successful attempts at using a scanning transmission x-ray microscope with a laser-plasma source are reported. Spatial resolutions were limited to about 650 nm by electrical noise in the detector, but single shot per pixel images were obtained of test and real specimens. The microscope was not optimized to the source since it was designed for use on the undulator beam line of a synchrotron. With an improved system, it is demonstrated that single shot per pixel imaging at high resolution (better than 50 nm) will routinely be possible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144067
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  • 12
    Electronic Resource
    Electronic Resource
    Evaluation of the Coulomb energy for single-electron interface trapping in sub-μm metal-oxide-semiconductor field-effect transistors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2970-2979 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capture and emission time constants are measured for a set of individual interface traps in different metal-oxide-semiconductor field-effect transistors (MOSFETs) by random telegraph signals. The data are evaluated to extract the Coulomb energy induced by the transfer of a single electron into an interface trap. A unified Coulomb energy of the order of several hundred millivolts independent of trap-specific properties is found, which is proportional to temperature and decays logarithmically with inversion carrier density in the MOSFET channel. The Coulomb energy found is in quantitative agreement with the theoretical modeling. The Coulomb effect is large compared to the trap lowering by the electric field and to the residual entropy change.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356194
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  • 13
    Electronic Resource
    Electronic Resource
    Conductance modulation of submicrometer metal–oxide–semiconductor field-effect transistors by single-electron trapping (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4178-4186 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The capture and emission of electrons at single, individual interface traps is studied in sub-μm metal–oxide–semiconductor field-effect transistors (MOSFETs) by the random telegraph signals (RTSs) they induce by source-drain conductance modulations. The magnitude of the RTSs observed frequently exceeds 10% of the channel conductance and it exhibits a large scatter over two orders of magnitude. Analytical estimates and computer modeling show that the magnitude of the RTSs and the scatter cannot occur for a uniform MOSFET channel. It is concluded that fixed oxide and interface charge centers, which are present in the active device area at a high concentration, cause a percolating current distribution in the channel. The lucky trap centers located close to current paths give rise to large RTSs. The scatter in the magnitude of the RTSs is due to the random location of traps in the percolation pattern. Trapping centers causing RTSs thus act as atomic probes of the nonuniform current distribution in the channel. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361785
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  • 14
    Electronic Resource
    Electronic Resource
    Band offsets and electronic structure of SiC/SiO2 interfaces (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3108-3114 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structure of SiC/SiO2 interfaces was studied for different SiC polytypes (3C, 4H, 6H, 15R) using internal photoemission of electrons from the semiconductor into the oxide. The top of the SiC valence band is located 6 eV below the oxide conduction band edge in all the investigated polytypes, while the conduction band offset at the interface depends on the band gap of the particular SiC polytype. In the energy range up to 1.5 eV above the top of the SiC valence band, interface states were found. Their electron spectrum is similar to that of sp2-bonded carbon clusters in diamond-like a-C:H films suggesting the presence of elemental carbon at the SiC/SiO2 interfaces. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361254
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  • 15
    Electronic Resource
    Electronic Resource
    Infrared absorption of epitaxial NiSi2 layers on Si(111) (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1343-1345 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared absorption of epitaxial type A and type B NiSi2 layers on Si(111) has been measured with photoacoustic spectroscopy. Type A silicides showed identical absorption as type B layers with corresponding thicknesses. The observed dependence of absorption on silicide thickness agrees with calculations based on no-interface absorption, in sharp contrast to previous studies of nonepitaxial silicide interfaces. These results suggest that the densities of electronic states at epitaxial NiSi2 interfaces are below the detection limit of this technique, ∼1014 cm−2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98673
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  • 16
    Electronic Resource
    Electronic Resource
    Random telegraph signal: An atomic probe of the local current in field-effect transistors (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1734-1741 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The switching amplitude of random telegraph signals (RTSs) caused by trapping a single electron at an individual interface defect is studied in sub-μm-sized metal oxide field-effect transistors (MOSFETs). The amplitudes of RTSs depend on the channel nonuniformity and, in particular, on the current distribution in the immediate vicinity of the trap. We find that to a good approximation the RTS amplitude is proportional to the square of the local current density. This mathematical relation is tested and verified with the help of a computer simulation. RTS amplitudes may thus be used as atomic probes of the local current density. By the evaluation of 187 RTS amplitudes in different MOSFETs of the same type, we deduce for the first time a histogram showing the magnitude distribution of the local current density in such devices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366892
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  • 17
    Electronic Resource
    Electronic Resource
    Deep level transient spectroscopy on single, isolated interface traps in field-effect transistors (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 634-636 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron emission from single, isolated traps is observed in stepped current transients of micrometer-size metal oxide semiconductor field-effect transistors. Deep level transient spectroscopy evaluation is performed by counting traps to estimate the average state density Dit ≈6 ×1010 eV−1 cm−2 close to the conduction-band edge (Ec−Eit =20–250 meV). The capture coefficient (prefactor for activated emission) is determined to Bn =10−21 cm3 s−1 for these slow traps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99388
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  • 18
    Electronic Resource
    Electronic Resource
    Energy spread and ion current measurements of several ion sources (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 3739-3745 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Energy spread and extracted current measurements are presented for five different types of ion sources: hot cathode, cold cathode, magnetron, microwave, and electron cyclotron resonance (ECR). The measurements were performed with a 45° parallel-plate energy analyzer with a resolution of better than 0.5 eV at 500 eV incident energy. Energy spreads ranged from 0.5 to 4 eV, while total extracted beam currents ranged from 2 to 30 μA. Beam currents due specifically to protons, 3He++ ions, and H+2 ions are also presented. The ECR and magnetron sources gave the best overall performance. These, along with the energy analyzer, are currently being used in experiments to study ion-atom collision physics. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144500
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  • 19
    Electronic Resource
    Electronic Resource
    Fast computer-controlled deep level transient spectroscopy system for versatile applications in semiconductors (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 1373-1377 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A fast computer-controlled and fully automated deep level transient spectroscopy (DLTS) system is described. Various DLTS techniques can be operated without changing the hardware. Simultaneous data acquisition and data processing considerably reduces the measurement time. The sensitivity of the system is increased by digital compensation of the sample capacitance and by averaging of a high number of transients. All the trap parameters are determined during one temperature scan.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138603
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  • 20
    Electronic Resource
    Electronic Resource
    Spatial coherence of a repetitive laser-plasma point x-ray source in the water window spectral region (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1155-1157 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose and demonstrate a coherent laser-plasma point x-ray source in the water window spectral region operating at a repetition rate of up to 100 Hz. The emission from the 10-μm-diameter source is filtered to generate monochromatic radiation at a 3.37 nm wavelength. Soft x-ray fringes of the Young's interference experiment were obtained with a visibility of 0.62±0.1 with a slit pair of 10.5 μm separation at a distance of 31.7 cm from the source. The source can be used to take either a hologram or transmission scanning x-ray micrograph within a reasonable exposure time of several minutes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107389
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