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  • 11
    Electronic Resource
    Electronic Resource
    Iodinated 3,5-Diaminobenzoic Acid Derivatives1 (1956)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 78 (1956), S. 3210-3216 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01594a066
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  • 12
    Electronic Resource
    Electronic Resource
    The Resolution of Methadone and Related Compounds (1948)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 70 (1948), S. 4194-4197 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01192a065
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  • 13
    Electronic Resource
    Electronic Resource
    Dialkylaminoalkyl Esters of Trisubstituted Acetic Acids (1949)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 71 (1949), S. 532-533 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01170a045
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  • 14
    Electronic Resource
    Electronic Resource
    MeV ion implantation induced damage in relaxed Si1−xGex (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2208-2218 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The damage produced by implanting, at room temperature, 3-μm-thick relaxed Si1−xGex alloys of high crystalline quality with 2 MeV Si+ ions has been studied as a function of Ge content (x=0.04, 0.13, 0.24, or 0.36) and Si dose in the dose range 1010–2×1015 cm−2. The accumulation of damage with increasing dose has been investigated by Rutherford backscattering spectrometry, optical reflectivity depth profiling, and transmission electron microscopy. An enhanced level of damage, and a strong decrease in the critical dose for the formation of a buried amorphous layer in Si1−xGex is observed with increasing x. Electron paramagnetic resonance studies show that the dominant defects produced by the implantation are Si and Ge dangling bonds in amorphouslike zones of structure similar to a-Si1−xGex films of the same x, and that the effect of increasing the ion dose is primarily to increase the volume fraction of material present in this form until a continuous amorphous layer is formed. A comparative study of the optically determined damage in the alloys with the use of a damage model indicates a significant increase in the primary production of amorphous nuclei in the alloys of Ge content x〉0.04. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364288
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  • 15
    Electronic Resource
    Electronic Resource
    Isoconcentration studies of antimony diffusion in silicon (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2173-2178 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of Sb in Si at concentrations around its solid solubility has been studied by isoconcentration experiments. The samples, grown by molecular-beam epitaxy, had constant Sb121 background dopings and a Sb123 spike embedded in this background. The diffusion was followed as a function of Sb background concentration at two different temperatures of 872 and 1019 °C by secondary ion mass spectrometry, differential Hall/resistivity measurements, and transmission electron microscopy. At concentrations exceeding the solid solubility Sb precipitates and interstitial-type dislocation loops were observed. At these concentrations the diffusivity decreased with increasing Sb background concentration. At concentrations below both the solid solubility and the intrinsic carrier concentration, for the highest diffusion temperature of 1019 °C, the diffusivity increases with increasing Sb background doping. This behavior is discussed considering mobile Sb2V complexes. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364286
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  • 16
    Electronic Resource
    Electronic Resource
    Surface morphology of silicon–tin alloys grown by molecular beam epitaxy on Si and Si1−xGex substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 394-396 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface morphology and bulk structure of both strained (0.01≤x≤0.053) and strain-free Si1−xSnx (x=0.055) layers grown by molecular beam epitaxy on (001) Si and Si1−yGey substrates have been investigated by atomic force and transmission electron microscopy. The surfaces of all Si1−xSnx layers were found to have a mazelike structure composed of rectangular features faceted primarily by {113} planes. Transmission electron microscopy images of the alloys revealed columnar structures originating at the interface between the alloys and the substrates. The formation of the observed surface morphologies and the columnar structure is attributed to the surface-growth processes modified by the Sn atoms as compared to the growth of pure Si. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118072
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  • 17
    Electronic Resource
    Electronic Resource
    Substitutional gold in Si1−xGex (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1743-1745 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that relaxed Si1−xGex of 0≤x≤0.25 grown by molecular beam epitaxy, using the compositional grading technique, can be doped with gold by a high-temperature indiffusion process from a deposited gold layer. Substitutional gold in both p- and n-type alloy layers has been identified and characterized by deep level transient spectroscopy, and the donor and acceptor levels of neutral, substitutional gold in the SiGe alloys were studied as a function of the Ge content. The data suggest that both the donor and acceptor levels are pinned to the conduction band. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117471
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  • 18
    Electronic Resource
    Electronic Resource
    Pulse-shaping mechanism in colliding-pulse mode-locked laser diodes (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3877-3879 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The large signal dynamics of passively colliding pulse mode-locked laser diodes is studied. We derive a model which explains modelocking via the interplay of gain and loss dynamics; no bandwidth limiting element is necessary for pulse formation. It is found necessary to have both fast and slow absorber dynamics to achieve mode-locking. Significant chirp is predicted for pulses emitted from long lasers, in agreement with experiment. The pulse width shows a strong dependence on both cavity and saturable absorber length. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115303
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  • 19
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing of Ge-implanted InP (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1514-1516 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results from n-type doping by Ge implantation at 200 keV into 〈100〉 p-type InP are reported. The degree of recrystallization and electrical activity after capless annealing by rapid thermal annealing was investigated as a function of dose, implantation, and annealing temperature by a combination of Rutherford backscattering spectrometry/channeling, differential Hall/resistivity, and secondary-ion mass spectrometry measurements. Room-temperature implantations resulted in continuous amorphous layers even at a dose of 2×1013cm−2 in contrast to hot implantations at 200 °C where no amorphous layers were created even for a dose as high as 5×1014 cm−2. For the latter dose an activation percentage of 37 and a maximum carrier concentration of 1×1019 cm−3 were achieved after rapid thermal annealing at 830 °C for 1 s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103380
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  • 20
    Electronic Resource
    Electronic Resource
    Diffusion of ion-implanted Sn and Sb in heavily doped n-type silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 755-757 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of ion-implanted Sn and Sb in silicon single crystals during rapid thermal annealing at 1000 and 1050 °C has been studied as a function of P donor concentration. For extrinsic/intrinsic carrier concentration ratios (n/ni )≥20, almost identical, extremely large diffusion coefficients are found for both impurities. The diffusion coefficients exhibit approximately an (n/ni )4 dependence. The onset of this dependence is accompanied by the appearance of a new defect-complex type containing Sb or Sn, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99823
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