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  • 11
    Electronic Resource
    Electronic Resource
    Cubic boron nitride films grown by low energy B+ and N+ ion beam deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 46-48 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the growth and the properties of BN films prepared by exclusive deposition of mass separated 11B+ and 14N+ ions. BN films grown with ion energies of 500 eV and at substrate temperatures of 350 °C show the IR absorption peak at 1080 cm−1, characteristic for c-BN. These films are nearly stoichiometric and, with transmission electron diffraction, the presence of c-BN nanocrystals was revealed. We compare the growth conditions for ion beam deposition on BN, CN, and diamondlike carbon and propose that the nucleation of nanocrystalline c-BN is related to the ionicity of the BN bond. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115487
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  • 12
    Electronic Resource
    Electronic Resource
    Superhard, conductive coatings for atomic force microscopy cantilevers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3053-3055 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron carbide thin films were grown by mass selected ion beam deposition using low energy 11B+ and 12C+ ions at room temperature. The amorphous films exhibit any desired stoichiometry controlled by the ion charge ratio B+/C+. Films with a stoichiometry of B4C showed the optimal combination of a high mechanical strength and a low electrical resistivity for the coating of atomic force microscopy (AFM) silicon cantilevers. The properties of such AFM tips were evaluated and simultaneous topography and Kelvin mode AFM measurements with high lateral resolution were performed on the systems (i) Au nanoparticles on a p-WS2 surface and (ii) conducting/superconducting YBa2Cu3O7−x. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415354
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  • 13
    Electronic Resource
    Electronic Resource
    Comment on "On the mechanism of the cubic phase formation in the boron nitride thin-film systems" [Appl. Phys. Lett. 79, 353 (2001)] (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1306-1307 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1452796
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  • 14
    Electronic Resource
    Electronic Resource
    Electrically conducting ion tracks in diamond-like carbon films for field emission (1999)
    Springer
    Applied physics 69 (1999), S. 239-240 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.80.Jh; 73.61.Cw; 79.70.+q
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Electrically conducting channels in an insulating carbon matrix were produced by 140-MeV Xe ion irradiation. The high local energy deposition of the individual ions along their pathes causes a rearrangement of the carbon atoms and leads to a transformation of the insulating, diamond-like (sp3-bonding) form of carbon into the conducting, graphitic (sp2-bonding) configuration. The conducting ion tracks are clearly seen in the current mapping performed with an atomic force microscope (AFM). These conducting tracks are of possible use in field emission applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050996
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  • 15
    Electronic Resource
    Electronic Resource
    Cylindrical spike model for the formation of diamondlike thin films by ion deposition (1998)
    Springer
    Applied physics 66 (1998), S. 153-181 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 81.15.Jj; 68.55.a
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: T /nS of nT rearrangements and nS atoms in the spike volume as the crucial parameter characterizing the ability of a given ion–target combination to achieve complete rearrangement of the spike volume. nT/nS〉1 is the optimum condition for diamondlike film growth. For aC films the ion energy dependence of nT/nS agrees well with the measured sp3 bond fraction. For Ar+-ion-assisted deposition of aC we find nT/nS〉1 above 50 eV with no pronounced ion energy dependence. Furthermore, our model predicts optimum conditions for the formation of cubic boron nitride between 50 eV and 3 keV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050652
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  • 16
    Electronic Resource
    Electronic Resource
    Agricultural impact of Chernobyl: a warning (1986)
    [s.l.] : Nature Publishing Group
    Nature 321 (1986), S. 817-817 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] SIR-Since the evening of 30 April 1986, when a series of thunderstorms brought down heavy fallout from Chernobyl along the northern flank of the Alps, we have conducted high-resolution y spectro-scopy measurements on rain water, on a high-efficiency particulate air (HEPA) filter and on various ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/321817a0
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  • 17
    Electronic Resource
    Electronic Resource
    Emission channeling (1996)
    Springer
    Hyperfine interactions 97-98 (1996), S. 247-283 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Hyperfine interaction techniques like Mössbauer effect or perturbedγγ angular correlation are commonly applied to study the structure and properties of impurity-defect complexes in solids. It is often difficult to resolve a certain defect structure unambiguously with these techniques, because an absolute determination of the lattice site of the probe atoms is not straight-forward. The emission channeling technique allows the direct determination of lattice sites of radioactive impurity atoms, incorporated into single crystalline solids. The channeling effects of electrons, positrons or alpha particles, emitted from radioactive impurities are measured along different crystal axes and planes. From the measured anisotropic emission distributions the lattice sites of the emitting atoms can be determined. Emission channeling can be applied to a large variety of different probe atoms. Also, rather low impurity concentrations, comparable to those typically required for hyperfine interaction techniques, are sufficient. In this contribution, the principles of the emission channeling technique, the experimental requirements and the quantitative analysis of emission channeling spectra are reviewed. The capabilities and possibilities, which the emission channeling technique offers, are highlighted by three recent experimental studies. First, studies of the diffusion of Ag in CdTe using transmutation doping with the electron emitting isotopes107mAg and109mAg are described. Second, lattice location studies of As in diamond, which is a potential n-type dopant in this material, will be discussed. Third, an experiment is described to study the lattice location of oversized impurities after low dose implantation into Fe. In this experiment, the unique decay properties of221Fr and221 Ra are utilized to determine the lattice sites of five different impurity atoms in a singleα emission channeling measurement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02150180
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  • 18
    Electronic Resource
    Electronic Resource
    Combination of emission channeling, photoluminescence and Mössbauer spectroscopy to identify rare earth defect complexes in semiconductors (1999)
    Springer
    Hyperfine interactions 120-121 (1999), S. 347-352 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Implanted radioactive 167Tm / 167Er and 169Yb / 169Tm impurities in Si and GaN were studied with emission channeling and photoluminescence spectroscopy. The effect of co-doping with oxygen on the rare earth (RE) lattice sites and their luminescence behavior was investigated. Tm and Yb occupy near-tetrahedral sites in Si and substitutional sites in GaN after room temperature implantation and annealing. O-RE complexes are formed upon co-doping with O resulting in modified luminescence signals. RE impurities remain substitutional in O-doped GaN, but are displaced from tetrahedral sites in O-doped Si. We discuss the feasibility of Mössbauer studies using 151Eu, 169Tm and 161Dy to determine the RE valence state and to identify RE defect complexes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1017064532027
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  • 19
    Electronic Resource
    Electronic Resource
    Detection of vacancy clustering by combined PAC and lattice location measurements (1983)
    Springer
    Hyperfine interactions 15 (1983), S. 379-382 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The formation of impurity-vacancy agglomerates starting with the trapping of monovacancies was studied using a combination of three complementary techniques applied to the system InCu: Perturbed γγ-angular correlation, ion channeling and channeling of conversion electrons. This results in an almost complete picture of the first stage of vacancy agglomeration at In impurities in Cu.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02159772
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  • 20
    Electronic Resource
    Electronic Resource
    Impurity lattice location and recovery of structural defects in semiconductors studied by emission channeling (1994)
    Springer
    Hyperfine interactions 84 (1994), S. 27-41 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Doping of semiconductors by ion implantation usually requires implantation doses below 1013 cm−2 to obtain typical impurity concentrations of 〈1018 cm−3. The lattice location of impurities as well as the defect recovery after such low dose implantations can be studied using the emission channeling technique. In this technique, single crystals are doped with radioactive probe atoms and the channeling effects of electrons, positrons or α-particles emitted from these atoms are measured. We present a quantitative analysis of electron emission channeling measurements after heavy-ion implantation into Si and III–V compound semiconductors by comparison with calculated channeling profiles based on the dynamical theory of electron diffraction. For In atoms implanted into Si, complete substitutionality was found after rapid thermal annealing to 1200 K. For lower annealing temperatures, the observed channeling effects indicate small mean displacements (of about 0.2 Å) of the In atoms from substitutional sites, caused by residual implantation defects. For GaAs, GaP and InP implanted at low temperatures with In or Cd isotopes, pronounced recovery stages around 300, 400 and 350 K, respectively, were observed and substitutional fractions close to 100% were derived after annealing above the stage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02060641
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