GLORIA

GEOMAR Library Ocean Research Information Access

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
Document type
Keywords
Publisher
Years
  • 11
    Electronic Resource
    Electronic Resource
    Microstructural characterization of nitrogen-implanted silicon-on-insulator (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 166-174 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of implant dose and postimplant annealing treatment on the microstructure of nitrogen-implanted silicon-on-insulator were studied by cross-sectional transmission electron microscopy techniques. In the lower dose case (0.75×1018/cm2) an amorphous silicon layer forms after implantation. Annealing at 1200 °C or higher results in a buried polycrystalline α-Si3N4 layer containing many randomly oriented silicon particles. Higher dose implantation results in an amorphous silicon-nitride layer. A porous layer also forms in the middle of the amorphous layer if the implant dose is 1.2×1018/cm2 or higher. The crystallization of the amorphous layer in the higher dose cases is shown to happen in two steps. In the first step nucleation and growth of α-Si3N4 grains occur in the amorphous nitride region to form a spherulitic polycrystalline structure. The second step is the cellular growth of the spherulitic nitride grains into the crystalline silicon regions. Silicon particles are trapped at the cell walls as the cellular reaction advances. These particles are conglomerated and sphereodized but retain the same orientation as the substrate silicon at higher temperatures. The quality of the top silicon film is excellent after annealing at 1200 °C or higher, irrespective of the implant dose.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338850
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 12
    Electronic Resource
    Electronic Resource
    Zinc doping in gallium antimonide grown by low-pressure metal-organic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 56-59 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zn-doped GaSb epilayers grown on GaAs and GaSb substrates by low-pressure metal-organic chemical vapor deposition were studied. Triethylgallium and trimethylantimony were used as Ga and Sb sources, respectively. The carrier concentrations of p-type GaSb epilayers were affected by V/III ratio and growth temperature. Diethylzinc(DEZn) was used as the p-type dopant. The relationship between carrier concentration P and mole fraction [DEZn] is P=K[DEZn]2.3. Photoluminescence for different carrier concentration was compared. There exist two different regions for the carrier concentration versus growth temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353829
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 13
    Electronic Resource
    Electronic Resource
    Levitation force and magnetic stiffness in bulk high-temperature superconductors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4358-4360 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Levitation forces between a small permanent magnet and a disk of bulk high-temperature superconductor at 77 K were measured as a function of vertical separation for disks of composition Y-Ba-Cu-O, Ag/Y-Ba-Cu-O, (Pb,Bi)-Sr-Ca-Cu-O, and Tl-Ba-Ca-Cu-O. The forces were highly hysteretic; however, for all samples, on the initial descent of the magnet toward the disk, the force was unique, independent of magnet speed, and varied approximately as the negative exponential of the separation distance. Magnetic stiffness, associated with minor hysteresis loops, was found to be approximately proportional to the levitation force, and nearly independent of magnet configuration and superconductor composition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344927
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 14
    Electronic Resource
    Electronic Resource
    High-speed rotation of magnets on high Tc superconducting bearings (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 397-399 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Levitation and rotation of cylindrical rare-earth magnets on yttrium-barium-copper-oxide superconducting bearings has been sustained at speeds of up to 120 000 rpm with a surface speed of 40 m/s. The decay of the free rotation rate has been measured at both atmospheric pressure and a partial vacuum to 2.6 μm Hg. The decay measurements in vacuum indicate that the flux drag torques are constant and independent of speed. The magnetic shear stress on the rotor magnet is estimated to be 150 dyn/cm2. It is believed that drag torques on rotating magnets are related to asymmetry in the flux density pattern of the magnet.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102795
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 15
    Electronic Resource
    Electronic Resource
    Zinc and copper carbenoids as efficient and selective a1/d1 multicoupling reagents. 1 (1989)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 111 (1989), S. 6474-6476 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00198a097
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 16
    Electronic Resource
    Electronic Resource
    Metal-sulfur-based air-stable passivation of GaAs with very low surface-state densities (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 327-329 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An air-stable electronic surface passivation for GaAs and other III–V compound semiconductors that employs sulfur and a suitable metal ion, e.g., Zn, and that is robust towards plasma dielectric deposition has been developed. Initial improvements in photoluminescence are twice that of S-only treatments and have been preserved for 〉11 months with SiOxNy dielectric encapsulation. Photoluminescence and x-ray photoelectron spectroscopies indicate that the passivation consists of two major components with one being stable for 〉2 years in air. This process improves heterojunction bipolar transistor current gain for both large and small area devices. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125734
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 17
    Electronic Resource
    Electronic Resource
    InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2788-2790 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated a functional P-n-p heterojunction bipolar transistor (HBT) using InGaAsN. The metalorganic-vapor-phase-epitaxy-grown Al0.3Ga0.7As/In0.03Ga0.97As0.99N0.01 HBT takes advantage of the narrower band gap energy (Eg=1.2 eV) of In0.03Ga0.97As0.99N0.01, which is lattice matched to GaAs. Compared with the Al0.3Ga0.7As/GaAs material system, the Al0.3Ga0.7As/In0.03Ga0.97As0.99N0.01 material system has a larger conduction-band offset, while the valence-band offset remains comparable. This characteristic band alignment is very suitable for P-n-p HBT applications. The device's peak current gain is 23, and it has a turn-on voltage of 0.77 V, which is 0.25 V lower than in a comparable P-n-p Al0.3Ga0.7As/GaAs HBT. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126476
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 18
    Electronic Resource
    Electronic Resource
    InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2262-2264 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In0.03Ga0.97As0.99N0.01/GaAs DHBT has a low VON of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In0.03Ga0.97As0.99N0.01 base layer. GaAs is used for the collector; thus the breakdown voltage (BVCEO) is 10 V, consistent with the BVCEO of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with δ doping is inserted at the base–collector junction. The improved device has a peak current gain of seven with ideal current–voltage characteristics. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126315
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 19
    Electronic Resource
    Electronic Resource
    Type II mid-infrared quantum well lasers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2976-2978 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed, optically pumped four-constituent Type-II (InAs-Ga1−xInxSb-InAs-AlSb) quantum well lasers emitting at 3.9–4.1 μm were observed to lase up to 285 K with a characteristic temperature T0 of 35 K for 170 K ≤Top≤270 K. A theoretical analysis predicts dramatic further improvements once the potential for suppressing Auger recombination is fully realized. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116374
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 20
    Electronic Resource
    Electronic Resource
    Histopathology of experimental Streptococcus sp. infection in tilapia, Oroochromis niloticus (L.), and channel catfish, Ictafurus punctatus (Ratinesque) (1996)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of fish diseases 19 (1996), S. 0 
    Details
    ISSN: 1365-2761
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: Nile tilapia, Oreochromis niloticus (L.), and channel catfish, Ictalurus punctatus (Rafinesque), were experimentally infected by immersion with three isolates (Lake, DL8O5 and MS91452) of Streptococcus sp. from diseased fish. To enhance infection, the lateral body surface of each fish was scraped prior to bacterial exposure. The Lake and DL8O5 isolates caused exophthalmia, ocular opacity and ocular haemorrhage in some tilapia. Histopathology of these fish revealed; meningitis; polyserositis of heart, liver, spleen, ovary and kidney; splenitis; ovaritis; and myocarditis. Isolate MS91452 induced only mild granulomas in spleen, kidney and ovary of tilapia. The Lake and DL8O5 isolates induced endophthalitis, Channel catfish infected with the Lake and DL805 isolates developed similar eye lesions to tilapia. Histologic lesions caused by all three isolates in channel catfish consisted of meningoencephalitis, mild myocarditis, splenitis and ovaritis, but these lesions were not as severe as in Nile tilapia.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2761.1996.tb00130.x
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...