GLORIA

GEOMAR Library Ocean Research Information Access

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Online Resource
    Online Resource
    Solar-Forschungscluster: Langzeit-Instabilitäten von Solarzellen - Forschung für einen erhöhten Ertrag - SolarLIFE : Schlussbericht zum Verbundprojekt : Teilprojekt 4: "Lokale und mikrostrukturelle Untersuchung von Degradationsprozessen in Siliziumsolarzellen" : Projektlaufzeit: 01.12.2014-30.04.2018 (2018)
    [Halle (Saale)] : [Max-Planck-Institut für Mikrostrukturphysik]
    Details Availability
    Keywords: Forschungsbericht ; Solarzelle
    Type of Medium: Online Resource
    Pages: 1 Online-Ressource (38 Seiten, 2,23 MB) , Illustrationen, Diagramme
    URL: https://doi.org/10.2314/KXP:1679750674
    DOI: 10.2314/KXP:1679750674
    Language: German
    Note: Förderkennzeichen BMBF 0325763D , Verbundnummer 01155861 , Unterschiede zwischen dem gedruckten Dokument und der elektronischen Ressource können nicht ausgeschlossen werden
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    GEOMAR CATALOGUE
    Link to Library Catalog
    get availability status
  • 2
    Electronic Resource
    Electronic Resource
    Recombination properties of structurally well defined NiSi2 precipitates in silicon (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 911-913 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report first results on the recombination properties of structurally well defined NiSi2 precipitates in n-type silicon. Under the conditions applied, precipitates form without the occurrence of punched out dislocations or any other secondary defects. We find that the minority-carrier diffusion length (LD) measured by electron beam induced current (EBIC) is related to the precipitate density NV and LD (approximately-equal-to) 0.7 × NV−1/3. EBIC investigations of individual precipitates reveal contrasts up to 40% demonstrating NiSi2 particles to be efficient recombination centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104474
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Characterization of haze-forming precipitates in silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4444-4450 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defects leading to haze formation after diffusion of the transition metals cobalt, nickel, copper, and palladium have been studied by means of transmission electron microscopy and preferential etching. In all cases crystalline metal silicide particles have been observed. Both cobalt and nickel form disilicide particles of different morphologies in the surface regions of silicon wafers, whereas copper and palladium form metal-rich silicide particles causing a supersaturation of Si self-interstitials or undersaturation of vacancies and leading to the formation of extrinsic dislocation loops.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340164
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    The temperature dependence of the ion beam induced interfacial amorphization in silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3425-3427 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the ion beam induced interfacial amorphization process (IBIIA) in silicon has been investigated at temperatures above 80 K using Rutherford backscattering spectrometry/channeling (RBS/C) and cross-sectional transmission electron microscopy (XTEM). Three regimes are observed. Above temperatures of about 320 K there is a strong temperature dependence of the IBIIA rate (thermal regime). At lower temperatures the rate moves towards a saturation value (transition regime). Below ∼150 K, IBIIA is nearly temperature independent (ballistic regime). This low-temperature regime can be explained by an athermal transport of point defects like in ballistic mixing processes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115781
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Nonconservative Ostwald ripening of dislocation loops in silicon (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2956-2958 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effects of the proximity of the surface on the ripening behavior of dislocation loops in preamorphized silicon. Starting from well-defined initial conditions, we have varied the location depth of the loops by successive chemical removal of surface layers and measured changes of the size–distribution function during subsequent annealing by means of transmission electron microscopy. Our results show that the amount of Si atoms bound in the loops is not conserved during annealing and that the loop location depth has a prominent effect on the ripening kinetics. Both these observations prove the nonconservative nature of Ostwald ripening of dislocation loops near wafer surfaces. In addition, we observed different ripening kinetics for annealing in vacuum and in Ar which show that different boundary conditions at the surface are established during annealing in these two ambients. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122642
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Study of laser-deposited metallic thin films by a combination of high-resolution ex situ and time-resolved in situ experiments (1999)
    Springer
    Applied physics 69 (1999), S. S455 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.55.-a
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Laser-deposited metallic alloys and multilayers were studied in detail by a combination of high-resolution ex situ and time-resolved in situ experiments. The purpose of these experiments is to better understand the special properties of laser-deposited metallic films in comparison with conventionally prepared thin films. During deposition, thickness, resistance, and electron diffraction (THEED) experiments show that the film surface is resputtered, local mixing at the interfaces of multilayers on a nanometre scale occurs, and metastable phases up to large film thicknesses are formed. After deposition, a compressive stress of 1–2 GPa was measured using four-circle diffractometry, and growth defects were observed on an atomic scale by electron microscopy (HRTEM) and field ion microscopy (FIM). The obtained structural details of the metallic films can be explained by an implantation model for the laser deposition process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390051437
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Probing grain boundaries in As-doped polycrystalline silicon (1999)
    Springer
    Hyperfine interactions 120-121 (1999), S. 383-388 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Using 111In–111Cd perturbed angular correlations, we investigated the behaviour of In in heavily As-doped polycrystalline silicon. The nuclear In tracers were either introduced by means of grain boundary (GB) diffusion or ion implantation. We find, that the in-diffused In tracers exclusively probe GBs which give rise to a broad distribution of static quadrupole frequencies. The implanted tracers exclusively probe Si bulk material, where they encounter As-dopants during thermal annealing and form the well-known In–As complexes #1 and #2, and the previously unknown complex #4 (eQVzz=117 MHz, η=0) which involves three As atoms on nearest neighbor sites with respect to the probe. The implications of the present experiment on acceptor doping and GB probing are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1017076801985
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    facet.materialart.
    Unknown
    A posteriori synchronization of scanning transmission electron microscopy signals with kilopixel per second acquisition rates (2019)
    In:  Ultramicroscopy
    Details
    Publication Date: 2020-02-12
    Description: The stability and sensitivity of scanning transmission electron microscopes as well as detectors collecting e.g. electrons which suffered different scattering processes, or secondary radiation, have increased tremendously during the last decade. In order to fully exploit capabilities of simultaneously recording various signals with up to 1000 px/s acquisition rates the central issue is their synchronization. The latter is frequently a non-trivial problem without commercially available solution especially if detectors of different manufacturers are involved. In this paper, we present a simple scanning pattern enabling a posteriori synchronization of arbitrarily many signals being recorded entirely independently. We apply the approach to the simultaneous atomic-scale acquisition of signals from an annular dark-field detector and electron energy loss as well as energy-dispersive x-ray spectrometers. Errors emerging in scanning direction due to the independence of the respective processes are quantified and found to have a standard deviation of roughly half the pixel spacing. Since there are no intermediate waiting periods to maintain synchronicity, the proposed acquisition process is, in fact, demonstrated to be 12% faster than a commercial hardware-synchronized solution for identical sub-millisecond signal integration times and hence follows the trend in electron microscopy to extract more information per irradiating electron.
    Language: English
    Type: info:eu-repo/semantics/article
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    GFZ OAI
  • 9
    facet.materialart.
    Unknown
    Contribution of Jahn-Teller and charge transfer excitations to the photovoltaic effect of manganite/titanite heterojunctions (2017)
    In:  New Journal of Physics
    Details
    Publication Date: 2020-02-12
    Description: The effect of correlation effects on photovoltaic energy conversion at manganite/titanite heterojunctions is investigated. As a model system we choose a heterostructure consisting of the small polaron absorber Pr0.66Ca0.34MnO3 (PCMO) epitaxially grown on single-crystalline Nb-doped SrTi0.998Nb0.002O3 (STNO) substrates. The high structural and chemical quality of the interfaces is proved by detailed characterization using high-resolution transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) studies. Spectrally resolved and temperature-dependent photovoltaic measurements show pronounced contributions of both the Jahn-Teller (JT) excitations and the charge transfer (CT) transitions to the photovoltaic effect at different photon energies. A linear temperature dependence of the open-circuit voltage for an excitation in the PCMO manganite is only observed below the charge-ordering temperature, indicating that the diffusion length of the photocarrier exceeds the size of the space charge region. The photovoltaic response is compared to that of a heterojunction of lightly doped Pr0.05Ca0.95MnO3 (CMO)/STNO, where the JT transition is absent. Here, significant contributions of the CT transition to the photovoltaic effect set in below the Neel temperature. We conclude that polaronic correlations and ordering effects are essentials for photovoltaic energy conversion in manganites.
    Type: info:eu-repo/semantics/article
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    GFZ OAI
  • 10
    facet.materialart.
    Unknown
    High-resolution Scanning Transmission EBIC Analysis of Misfit Dislocations at Perovskite pn-Heterojunctions (2019)
    In:  Journal of Physics : Conference Series
    Details
    Publication Date: 2020-02-20
    Description: Fundamental losses of photovoltaic energy conversion are transmission of sub band gap photons and thermalisation which are the underlying physics of the Shockley-Queisser limit defining maximum conversion efficiency of single-junction solar cells. Strongly correlated materials such as perovskites are promising candidates to exceed this limit by exploiting (i) long wavelength light absorption and (ii) the existence of long-living intraband excitations indicating that harvesting hot excess carriers might be feasible in such systems. In this work, we study pn-heterojunctions produced from Pr1-xCaxMnO3 on SrTi1-yNbyO3 by means of microscopic techniques. Such systems exhibit relevant quantities such as space charge layer width, screening lengths and excess carrier diffusion lengths in the 1-10 nm range which makes the use of standard methods such as electron beam induced current a challenging task. We report scanning transmission electron beam induced current experiments of misfit dislocations at the heterojunction. The dislocation-induced reduction of the charge collection is studied with nanometer spatial resolution. Effects of surface recombination and the heterojunction electric field are discussed.
    Type: info:eu-repo/semantics/article
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    GFZ OAI
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...