In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 1S ( 1993-01-01), p. 560-
Abstract:
Two techniques were used in the fabrication of InGaP/GaAs TEBTs and experimental results by the two fabrication techniques were compared. It is found that the TEBT fabricated by base diffused ohmic contact technique with base surface passivated by an InGaP layer shows a differential current gain as high as 306. To our knowledge, the current gain obtained was the highest value reported to date in InGaP/GaAs hetero-structure bipolar transistors with similar base doping (1×10 19 cm -3 ) and thickness (100 nm).
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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