In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 12A ( 1994-12-01), p. L1662-
Abstract:
High quality Nb/Al–AlO x –Al/Nb Josephson tunnel junctions have been fabricated using electron beam evaporation
as the deposition technique. At 4.2 K, value of V m , the quality factor, exceeding 60 mV has been achieved;
this value of V m is the highest reported for electron beam evaporated Nb–AlO x –Nb junctions and compares well
with the best Nb–AlO x –Nb junctions fabricated by the sputtering technique. We discuss the fabrication process
used and present a detailed characterization of a typical Josephson junction.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.L1662
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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