In:
Journal of Physics D: Applied Physics, IOP Publishing, Vol. 54, No. 14 ( 2021-04-08), p. 145301-
Abstract:
Two-dimensional (2D) materials present various extraordinary properties that are advantageous in optoelectronic devices with atomically thin nature. Despite their excellent light–matter interaction, a low optical absorption that is proportional to thickness is considered to be a major limitation. In this study, a gap-mode plasmon structure is applied to the Schottky junction of Au–MoS 2 to compensate for its low absorption. The magnitude of the gap-mode plasmon is generally known to be inversely proportional to the gap distance between two metal nanostructures; hence, an atomically thin 2D material can be considered to be a good candidate for a gap spacer. Owing to the gap-mode plasmon structure, the photoresponsivity of the proposed device is enhanced by approximately 11.6 times from 25 to 290 A W −1 under 1 nW of laser power, without photoresponse time degradation. Two operation modes, named the photovoltaic and the photoconductive mode, are also observed through different response times; these present different carrier transport mechanisms depending on the existence of bias voltage.
Type of Medium:
Online Resource
ISSN:
0022-3727
,
1361-6463
DOI:
10.1088/1361-6463/abd6ac
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2021
detail.hit.zdb_id:
209221-9
detail.hit.zdb_id:
1472948-9
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