In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 5L ( 2005-05-01), p. L646-
Abstract:
Al 2 O 3 /Si 3 N 4 insulated-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) have been fabricated, where excellent RF characteristics have been obtained in addition to the low gate leakage current as the result of employing the metal–insulator–semiconductor (MIS) structure. In an HFET with a gate length ( L g ) of 0.1 µm, the cutoff frequency ( f T ) and maximum oscillation frequency ( f max ) were estimated to be 70 and 90 GHz, respectively. The drain current density ( I d ) and transconductance ( g m ) were 1.30 A/mm and 293 mS/mm, respectively. The gate leakage current ( I g ) was as low as 4×10 -5 A/mm even at a forward bias voltage of +3 V.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.L646
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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