In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. S2 ( 1993-01-01), p. 380-
Abstract:
The adsorption and decomposition behavior of silane (SiH 4 ) on Cu(111) surface has been investigated by use of Si K-edge XAFS. Saturated adsorption of silane on Cu(111) at 100K produces the monolayer species, which yields a clear but fragile (√3×√3)R30° LEED pattern. The adsorbed species still has a molecular character and its Si K-XANES spectra show a significant polarization dependence. From the results of XANES and SEXAFS, it is deduced that SiH 3 fragments adsorb on atop of Cu atoms with the Si-Cu distance of 2.48±0.02Å. Heating up to 300K, Si K-XAFS spectra change drastically, indicating that the adsorbed species decomposes to atomic Si to form silicide-like structure.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAPS.32S2.380
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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