In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 446 ( 1996)
Abstract:
The trapping properties of the Si-Si bond in Si 3 N 4 and SiO 2 were investigated. The MINDO/3 calculations show that the spin polarization of the Si-Si bond with a captured hole takes place in both SiO 2 and Si 3 N 4 . The ESR (Electron Spin Resonance) measurements were made in Si 3 N 4 with captured electrons and holes. The number of localized carriers was of two orders of magnitude larger than that used by others. The ESR signal of localized electrons and holes was not observed. A new mechanism of the antiferromagnetic ordering of localized electrons and holes in an insulator with a large concentration of traps is proposed. According to this mechanism, the antiferromagnetic ordering in Si 3 N 4 may be caused by the resonance tunneling of localized spins through nonoccupied traps. We believe that the deep traps responsible for the electron and hole capturing in Si 3 N 4 are the Si-Si bonds.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-446-169
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1996
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