In:
ECS Transactions, The Electrochemical Society, Vol. 6, No. 11 ( 2007-09-28), p. 23-34
Abstract:
Morphological and structural changes in porous silicon por-Si grown on differently doped Si wafers under anodic oxidation in phosphoric acid were studied. The two degrees of oxidation were confirmed: slighter (pore walls) and stronger (bulky) oxidation. Slighter oxidized por-Si does not experience any structural or morphological changes but chemical composition of the pore walls is gradually changed to Si-OH terminations. Stronger oxidation is accompanied by progressive morphological and structural transformations. Conductivity of the porous layer plays a significant role in the observed behavior. In less doped samples only a stronger oxidation started at the bottom of the porous layer is found. Porous layer becomes electrically separated from the Si wafer (electrode) and surface Si-Hx groups are preserved. Thus, doping level and conductivity of the Si wafer determines a spatial distribution of the porous electrode/ electrolyte interface and possibility to conserve native chemical composition of por-Si after electrochemical oxidation.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2007
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