In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 12R ( 1992-12-01), p. 3775-
Abstract:
The effects of heat treatment in an ultrahigh vacuum on (111)Si crystallinity are investigated using Si substrates and molecular beam epitaxy films. On the heated substrates, a high density of etch pits is observed following Secco etching. The etch pit densities of specimens heated at 600°C, 700°C and over 800°C for 100 min are 6×10 7 cm -2 , 1.4×10 8 cm -2 and 3-5×10 -9 cm -2 , respectively. However, if over 5 nm of the surface is removed by etching, no etch pits are formed. These defects affect the crystal quality of epitaxial layers. Films grown below 700°C on a substrate preheated to 850°C have defects in all regions. On the other hand, films grown above 700°C only have defects within 8 nm of the surface.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.31.3775
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1992
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
2006801-3
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