In:
Journal of Applied Physics, AIP Publishing, Vol. 99, No. 11 ( 2006-06-01)
Abstract:
We report studies of the morphological, electrical, and optical properties of InN grown by hydride vapor phase epitaxy. The layers have been grown on c-plane sapphire substrates and epitaxial GaN, Al0.7Ga0.3N, and AlN templates grown on sapphire. InN properties are found to depend on template type with improvement of crystal structure in the template substrate order AlN→AlGaN→GaN. X-ray studies reveal InN layers grown on template substrates to be relaxed with lattice constants a=3.542Å and c=5.716Å. The Raman spectra and optical gaps of the InN layers, vary with free-carrier concentration in agreement with previous studies. We obtain a value of 2.5±0.2 for the index of refraction of InN.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2006
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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