In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 1R ( 2001-01-01), p. 269-
Abstract:
Epitaxial growth of 20-nm-thick CoSi 2 films on Si(001) surfaces has been investigated for a two-step growth and reactive deposition epitaxy (RDE) at growth temperatures of 320–680°C using in-situ reflection high-energy electron diffraction and scanning tunneling microscopy, and ex-situ X-ray diffraction and atomic force microscopy. For the RDE, three-dimensional CoSi 2 islands with a {115}-faceted structure grow along the 〈 110 〉 directions and pinholes or channels with depths over ∼20 nm are formed. However, for the two-step growth, no {115}-faceted islands exist and the depth of pinholes or channels decreases greatly. In the two-step growth, cobalt is solely deposited at an elevated substrate temperature on an epitaxial CoSi 2 (001) film formed by solid-phase epitaxy of 0.23-nm-thick Co as the first step. The first-step CoSi 2 film has effects on restraining the Si diffusion from the substrate at the pinhole sites and promoting the layer-by-layer growth at the second step. The original two-step growth technique will be highly suitable for the realization of high-quality epitaxial CoSi 2 contacts in the future ULSI technology.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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