In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 3S ( 1993-03-01), p. 1401-
Abstract:
The geometry and the coverage-dependent growth structures formed by Na deposition on the GaAs(110) surface were studied by a field-ion scanning tunneling microscope (FI-STM) in an ultrahigh-vacuum. In the low-coverage regime at 300 K, Na adatoms reside on a bridge site encompassing one Ga and two As surface atoms to form linear chains along the substrate [11̄0] direction. The Na-Na nearest-neighbor distance in this low-density chain structure is 0.8 nm. With slightly larger Na coverages, the chains became disordered. Some of them were packed closer to form domains showing a local 2×2 structure. None of high-density 2D ordered structures or low-density zigzag chains were observed, in contrast to the Cs/GaAs(110) system. Additional Na adsorption resulted in the formation of three-dimensional disordered clusters. The saturation coverage of Na adsorption on the GaAs(110) surface was determined to be about 0.1 ML (1 ML=2 Na per substrate unit cell). The I - V curve recorded over the clean surface was consistent with published data for n-GaAs(110), while no evidence of metallic characteristics was found in the I - V curves recorded over the various Na-covered surfaces.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.1401
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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