In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 6S ( 1993-06-01), p. 3089-
Abstract:
The reaction between mass-separated low-energy (30 eV) SiCl n + ion beams and Si and SiO 2 substrates was studied to investigate the influence of the number of Cl atoms in SiCl n species on their deposition characteristics. It has been found that the deposition yield of Si is positive (deposition) at n =1 and it becomes negative (etching) at n =3 on the Si substrate while it is nearly zero on SiO 2 . In the presence of O 2 gas, the deposited species change to silicon oxides and the deposition of SiO 2 also takes place on SiO 2 with SiCl 3 + . The etching of Si by SiCl 3 + , however, takes place and the etching yield was found to be unaffected by O 2 . These results can be explained if adsorbed Cl atoms are assumed to desorb as SiCl 2 , leaving either Si or Cl on the substrate depending on the value of n . In the O 2 ambience, the preferred bonding of Si with O leads to the deposition of SiO 2 , except in the case of SiCl 3 + on Si where excess Cl atoms react with Si.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.3089
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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