In:
ECS Transactions, The Electrochemical Society, Vol. 50, No. 9 ( 2013-03-15), p. 245-254
Abstract:
The epitaxial growth of strained Si1-x-yGexCy layer with high Ge fraction and high C fraction on unstrained and tensile-strained Si(100) is performed at 500 or 550oC by ultraclean low-pressure chemical vapor deposition. Evaluating the Si1-x-yGexCy layer by high resolution X-ray photoelectron spectroscopy (XPS), X-ray diffraction and Raman scattering spectroscopy, it is proposed that XPS C1s peak at around 283.3 eV is attributed to substititional C in Si1-x-yGexCy layer. The relationship between Raman shift and vertical lattice constant for the strained layer is explained qualitatively and it is confirmed that growth characteristics as well as electrical activity of impurity in the strained layer are influenced by the substrate surface strain before the layer growth. By stripe-shape patterning unstrained Si cap layer/strained Si1-x-yGexCy layer/Si(100) heterostructure, the compressive- and tensile-strained Si layer formation is performed.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
DOI:
10.1149/05009.0245ecst
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2013
Permalink