In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 12S ( 1993-12-01), p. 6147-
Abstract:
We demonstrate direct mask fabrication using a finely-focused electron beam and subsequent electron-beam-assisted etching for pattern transfer onto a GaAs substrate. An electron beam at 50 kV is irradiated in a styrene gas ambient to deposit a mask on a GaAs substrate, and a flood electron beam is irradiated on a GaAs surface in a chlorine gas ambient. The deposition rate of the EB irradiated mask is about 0.05 nm/(µC/cm). At a 7 µC/cm line dose, the selective ratio between the deposited mask and the GaAs is enough to fabricate a nanometer-scale GaAs line pattern.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.6147
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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