In:
SID Symposium Digest of Technical Papers, Wiley, Vol. 41, No. 1 ( 2010-05), p. 307-310
Abstract:
The integration of carbon nanotube (CNT) emitters with metal‐oxide‐semiconductor field‐effect transistor (MOSFET) can stabilize and control the emission current of carbon nanotubes (CNTs). As the unit process, the CNTs were grown on the drain part of MOSFETs using the resist‐assisted patterning (RAP) process. The electron emission current of CNTs grown on the drain was switched with a low voltage of the externally connected field‐effect transistor and was uniform. The electron emission properties of CNT‐emitters with the externally connected field‐effect transistor were discussed.
Type of Medium:
Online Resource
ISSN:
0097-966X
,
2168-0159
Language:
English
Publisher:
Wiley
Publication Date:
2010
detail.hit.zdb_id:
2526337-7
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