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  • 11
    In: Integrated Ferroelectrics, Informa UK Limited, Vol. 1, No. 2-4 ( 1992-07), p. 213-222
    Type of Medium: Online Resource
    ISSN: 1058-4587 , 1607-8489
    Language: English
    Publisher: Informa UK Limited
    Publication Date: 1992
    detail.hit.zdb_id: 2037916-X
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  • 12
    Online Resource
    Online Resource
    AIP Publishing ; 1997
    In:  Journal of Applied Physics Vol. 81, No. 7 ( 1997-04-01), p. 3316-3319
    In: Journal of Applied Physics, AIP Publishing, Vol. 81, No. 7 ( 1997-04-01), p. 3316-3319
    Abstract: A molecular beam epitaxy grown wavelength tunable GaAs p+-i homojunction interfacial work-function internal photoemission far-infrared detector is developed. The multilayer (p+-i-p+-i-…) detector structures consist of 2, 5, and 10 emitter layers. Experimental results are explained in terms of the number of emitter layers and the doping concentrations of the emitter layer. A detector with 10 multilayers and an emitter layer doping concentration (Ne) of 3×1018 cm−3 shows a current responsivity of 2 A/W, an effective quantum efficiency of 9.2% (at 26.3 μm) with a cutoff wavelength of 85 μ and the noise equivalent power of 2.18×10−12 W/Hz at 4.2 K.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 13
    Online Resource
    Online Resource
    American Association of Physics Teachers (AAPT) ; 1965
    In:  American Journal of Physics Vol. 33, No. 12 ( 1965-12-01), p. 1099-1099
    In: American Journal of Physics, American Association of Physics Teachers (AAPT), Vol. 33, No. 12 ( 1965-12-01), p. 1099-1099
    Type of Medium: Online Resource
    ISSN: 0002-9505 , 1943-2909
    RVK:
    Language: English
    Publisher: American Association of Physics Teachers (AAPT)
    Publication Date: 1965
    detail.hit.zdb_id: 1472799-7
    detail.hit.zdb_id: 2947-6
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  • 14
    Online Resource
    Online Resource
    American Vacuum Society ; 1991
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 9, No. 3 ( 1991-05-01), p. 409-413
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 9, No. 3 ( 1991-05-01), p. 409-413
    Abstract: Experimental data are presented that confirm ferroelectric thin films of BaMgF4 can be grown by ultrahigh vacuum (UHV) sublimation on semiconductor and metallized substrates at temperatures below 500 °C. Hysteresis properties of the films are shown to be qualitatively consistent with those measured on thinned single-crystal samples cut perpendicular to the ferroelectric (orthorhombic) a axis. Loops from weakly oriented films on Si(100) display a Pr/Ps ratio of approximately 0.84, with Ps =1.6 μC/cm2 and EC =150 kV/cm. These values are explained on the basis of the film orientation and the measured properties for the bulk crystals. Metal–insulator–semiconductor structures formed with fluoride layers grown on lightly doped Si substrates yielded C–V switching properties indicating their suitability for use in high-performance ferroelectric field-effect transistor memory structures. In particular, switching attributable to polarization charge reversal inside the ferroelectric layer, rather than by tunnel injection of carriers from the Si into the ferroelectric, has been achieved for the first time with this material.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1991
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 15
    Online Resource
    Online Resource
    AIP Publishing ; 1991
    In:  Applied Physics Letters Vol. 58, No. 14 ( 1991-04-08), p. 1470-1472
    In: Applied Physics Letters, AIP Publishing, Vol. 58, No. 14 ( 1991-04-08), p. 1470-1472
    Abstract: Stoichiometric films of bismuth titanate, Bi4Ti3O12, have been grown for the first time by the technique of pulsed excimer laser deposition. Ferroelectric films were obtained at temperatures as low as 500 °C on Si(100), MgO(110), and Pt-coated Si(100) substrates. Hysteresis measurements using a Pt-coated Si sample yielded a saturation polarization value of about 28 μC/cm2, consistent with a randomly oriented titanate film structure. A preliminary metal-insulator-semiconductor sandwich structure of the form Bi4Ti3O12-CaF2(100 Å)-Si was grown and used to examine polarization induced memory switching effects.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1991
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 16
    Online Resource
    Online Resource
    AIP Publishing ; 1965
    In:  Journal of Applied Physics Vol. 36, No. 5 ( 1965-05-01), p. 1699-1706
    In: Journal of Applied Physics, AIP Publishing, Vol. 36, No. 5 ( 1965-05-01), p. 1699-1706
    Abstract: The structure and oxidation of thin alloy films of composition Au-15 at.% Ni have been investigated by means of x-ray and electron diffraction, and the oxide growth rate determined by measuring changes in the electrical resistivity of the films during oxidation. The films are prepared by sputtering and, even at low substrate temperatures, comprise single-phase homogeneous structures. Oxidation in the temperature range 250°–310°C shows a two-stage logarithmic growth rate (or resistivity change) with time similar to that observed for Ni, Cu, and Fe. This behavior is consistent with the formation of oxide only at the alloy film surface, and can be interpreted qualitatively in terms of the electron-transfer model proposed by Uhlig et al., for the oxidation of pure Ni. Epitaxial alloy films with (001) and (111) orientation are produced by sputtering onto the cleaved surfaces of NaCl and mica at about 400°C. On annealing these films at and above 500°C, pre-precipitation effects are observed in the electron-diffraction patterns. These are associated with the formation, in succession, of the superlattice structures, NiAu3 and NiAu. True precipitation of Ni-rich alloy occurs at temperatures above 600°C. Oxidation of epitaxial films of the disordered alloy at temperatures below 250°C results in the growth of poorly crystallized, non-oriented NiO. At 280°C both non-oriented and also three differently oriented oxide products, are formed, the NiO orientations corresponding to those reported by Collins and Heavens for oxide growth on Ni films. At 400°C only oxide orientations parallel to the metal film are detected.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1965
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 17
    Online Resource
    Online Resource
    American Vacuum Society ; 1992
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 10, No. 4 ( 1992-07-01), p. 1554-1561
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 10, No. 4 ( 1992-07-01), p. 1554-1561
    Abstract: Recent advances in the development of high quality thin films of ferroelectric materials have created renewed interest in ferroelectric random access memory (FERRAM) devices. At the present time, several groups are pursuing the development of FERRAMs, where a thin film ferroelectric capacitor memory element is integrated either adjacent to or directly above the circuit elements in a standard silicon or gallium arsenide integrated circuit. However, these designs provide destructive readout (DRO) only. An alternative monolithic device concept, where the ferroelectric thin film is integrated directly into the semiconductor field effect transistor (FET) element, provides not only nonvolatility, but also nondestructive readout (NDRO). For DRO FERRAM structures, lead–zirconate–titanate is the most widely investigated material at present. At Westinghouse, we are concentrating our efforts on the NDRO ferroelectric memory FET approach, using barium magnesium fluoride (BaMgF4) and bismuth titanate (Bi4Ti3O12) thin films. In this paper, we shall review the current status of the integration of ferroelectric thin films into nonvolatile memory devices, with special emphasis on our own results using BaMgF4 and Bi4Ti3O12.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1992
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 18
    Online Resource
    Online Resource
    Informa UK Limited ; 1992
    In:  Integrated Ferroelectrics Vol. 2, No. 1-4 ( 1992-11), p. 377-386
    In: Integrated Ferroelectrics, Informa UK Limited, Vol. 2, No. 1-4 ( 1992-11), p. 377-386
    Type of Medium: Online Resource
    ISSN: 1058-4587 , 1607-8489
    Language: English
    Publisher: Informa UK Limited
    Publication Date: 1992
    detail.hit.zdb_id: 2037916-X
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  • 19
    Online Resource
    Online Resource
    Informa UK Limited ; 1993
    In:  Integrated Ferroelectrics Vol. 3, No. 3 ( 1993-10), p. 217-223
    In: Integrated Ferroelectrics, Informa UK Limited, Vol. 3, No. 3 ( 1993-10), p. 217-223
    Type of Medium: Online Resource
    ISSN: 1058-4587 , 1607-8489
    Language: English
    Publisher: Informa UK Limited
    Publication Date: 1993
    detail.hit.zdb_id: 2037916-X
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  • 20
    Online Resource
    Online Resource
    AIP Publishing ; 1996
    In:  Journal of Applied Physics Vol. 79, No. 10 ( 1996-05-15), p. 7510-7513
    In: Journal of Applied Physics, AIP Publishing, Vol. 79, No. 10 ( 1996-05-15), p. 7510-7513
    Abstract: We present a rigorous and convenient approach for estimating the resonant states from the pole of the scattering matrix (reflection coefficient) in the complex energy plane and for determining the resonant tunneling time from the spacing of the energy doublets arising at resonance. The numerical calculation is much faster than numerical integration of the Schrödinger equation. When we apply this method to the coupling of two identical quantum wells, it is shown that the usual and naive estimation of resonant tunneling time through the Wentzel-Kramers-Brillouin method is invalid.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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