In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 11B ( 1998-11-01), p. L1386-
Abstract:
The gain spectral characteristics of 1.5 µm wavelength GaInAsP/InP compressively-strained quantum-wire lasers with a wire width of 20 nm and 25 nm, fabricated by electron beam lithography and 2-step
organometallic vapor phase epitaxial growth, were measured at a temperature of 100 K and were compared with those of quantum-film lasers fabricated on the same wafer.
It was found for the first time that the material gain spectrum of quantum-wire lasers was narrower than that of the quantum-film laser.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.L1386
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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