In:
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, American Vacuum Society, Vol. 4, No. 3 ( 1986-05-01), p. 701-705
Abstract:
We have investigated reactive ion beam etching of semiconductor and insulator materials using gases, such as CF4 and C2F6, and compared the etching rates with those of argon ion milling. The ion beam is generated by a Kaufman-type ion source, in a milling system manufactured by the Commonwealth Scientific Corporation. When a number of semiconductors such as InGaAs, InP, GaAs, Si, and Ge are etched with an argon ion beam, the etch rate of these materials increases linearly with the increase of beam current density. Quite different behavior is seen when CF4 or C2F6 ion beams are used; the etch rate deviates from a linear dependence of current density at high beam current density. The etch rates of all the above materials using Ar are higher than the etch rates using CF4 or C2F6. However, for substrates of SiO2, BaO, LiNbO3, and both C2F6 and CF4 give better linearity and higher etching rates than argon. There is some evidence to suggest that at high beam currents, CF4 and C2F6 cause accumulation of carbon on the surface. Carbon buildup on the SiO2, BaO, LiNbO3, and other oxides is minimal since the oxygen in the lattice will form volatile products with carbon in the form of CO, CO2, or COF2, and therefore better linearity is seen. We report that the dependency of III–V compound etching rates on current density can be adjusted both by adjusting the axial magnetic field and introduction of oxygen. We also report the differential etching ratio between photoresist and semiconductor materials for gases C2F6, CF4, Ar/O2, and Ar. We show that the differential etching ratio is best for C2F6 gas.
Type of Medium:
Online Resource
ISSN:
0734-211X
,
2327-9877
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1986
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
1475429-0
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