In:
Applied Physics Letters, AIP Publishing, Vol. 77, No. 1 ( 2000-07-03), p. 148-150
Abstract:
Visualization of transition phenomena of photoexcited free carriers by scanning near-field millimeter-wave microscopy has been demonstrated. A scanning millimeter-wave microscope using a metal slit-type probe and an image reconstruction algorithm based on computerized tomographic imaging has been used in the experiment to achieve two-dimensional time-resolved imaging. Experiments performed at 60 GHz (λ=5 mm) under room temperature conditions show that generation, extinction, and diffusion processes of photoexcited free carriers generated in the silicon layer of a silicon on quartz substrate can be imaged with a time division of one nanosecond and a spatial resolution of 110 μm (∼λ/45).
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2000
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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