In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 61, No. SC ( 2022-05-01), p. SC1037-
Abstract:
We studied the phase diagram of (In x Ga 1− x ) 2 O 3 thin films with a composition of x = 0 to 1 on Aluminum Nitride (AlN) templates grown using mist chemical vapor deposition. From X-ray diffraction results, we observed that the (In x Ga 1− x ) 2 O 3 thin films exhibited three different single-phase crystal structures depending on the value of x : orthorhombic ( κ )-(In x Ga 1− x ) 2 O 3 for x ≤ 0.186, hexagonal (hex)-(In x Ga 1− x ) 2 O 3 for 0.409 ≤ x ≤ 0.634, and body-centered cubic (bcc)-(In x Ga 1− x ) 2 O 3 for x ≥ 0.772. The optical bandgap of (In x Ga 1− x ) 2 O 3 was tuned from 3.27 eV (bcc-In 2 O 3 ) and 4.17 eV (hex-InGaO 3 ) to 5.00 eV ( κ -Ga 2 O 3 ). Moreover, hex-(In x Ga 1− x ) 2 O 3 exhibited a wide bandgap (4.30 eV) and a low resistivity (7.4 × 10 ‒1 Ω·cm). Furthermore, hex-(In x Ga 1− x ) 2 O 3 thin films were successfully grown on GaN and AlGaN/GaN templates. Therefore, hex-(In x Ga 1− x ) 2 O 3 can be used in transparent conductive films for deep-ultraviolet LEDs.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.35848/1347-4065/ac4688
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2022
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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