In:
Surface and Interface Analysis, Wiley, Vol. 51, No. 7 ( 2019-07), p. 774-782
Abstract:
In this paper, we investigate the structures and insulating characters of the tetragonal zirconia (t‐ZrO 2 ) thin films with various possible terminations within the lower‐index Miller planes (001) and (100). It is found that, firstly, a shift towards higher energy region makes the valence band of the OO‐terminated thin films of the (001) Miller plane of t‐ZrO 2 cross the Fermi level E F and thus are unusable as a gate dielectric oxide in integrated‐circuit (IC) industry because of large‐leakage current. Secondly, a new splitting state presented just below the bottom of conduction band, and the Fermi level E F drops between them, which imply that the Zr‐terminated thin films of the (001) Miller plane of t‐ZrO 2 are also unusable as a gate dielectric oxide in IC industry because of large leakage current. Thirdly, the insulating character disappears completely for Zr + OO‐terminated thin films of the (001) Miller plane of t‐ZrO 2 and thus is also unusable as a gate dielectric oxide in IC industry because of metal character. Fourthly, the insulating character is maintained for the ZrO 2 ‐terminated thin films of the (100) Miller plane and thus is usable as a gate dielectric oxide in IC industry.
Type of Medium:
Online Resource
ISSN:
0142-2421
,
1096-9918
Language:
English
Publisher:
Wiley
Publication Date:
2019
detail.hit.zdb_id:
2023881-2
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